Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes

Investigating the relationship between the breakdown voltage and the capacitance of GaInN light-emitting diodes (LEDs), we find that a lower capacitance due to weaker internal electric field in depletion region or wider depletion width at the pn junction results in lower reverse leakage current and thus larger breakdown voltage. The measured breakdown voltage and capacitance of LEDs show a strong correlation, opening a nondestructive and non-intrusive way to estimate the breakdown voltage of an LED based on the capacitance-voltage measurement.