Strong emission of THz radiation from GaAs microstructures on Si

Inhee Maeng; Gyuseok Lee; Chul Kang; Gun Wu Ju; Kwangwook Park; Seoung Bum Son; Yong Tak Lee; Chul Sik Kee

doi:10.1063/1.5079668

Strong emission of THz radiation from GaAs microstructures on Si

Inhee Maeng
, Gyuseok Lee
, Chul Kang
, Gun Wu Ju
, Kwangwook Park
, Seoung Bum Son
, Yong Tak Lee
, Chul Sik Kee

Electronic Materials Engineering

Gwangju Institute of Science and Technology
Korea Advanced Nano Fab Center
National Renewable Energy Laboratory

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

Original language	English
Article number	125027
Journal	AIP Advances
Volume	8
Issue number	12
DOIs	https://doi.org/10.1063/1.5079668
State	Published - 2018.12.1

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10.1063/1.5079668

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title = "Strong emission of THz radiation from GaAs microstructures on Si",

abstract = "Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.",

author = "Inhee Maeng and Gyuseok Lee and Chul Kang and Ju, \{Gun Wu\} and Kwangwook Park and Son, \{Seoung Bum\} and Lee, \{Yong Tak\} and Kee, \{Chul Sik\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

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doi = "10.1063/1.5079668",

language = "English",

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TY - JOUR

T1 - Strong emission of THz radiation from GaAs microstructures on Si

AU - Maeng, Inhee

AU - Lee, Gyuseok

AU - Kang, Chul

AU - Ju, Gun Wu

AU - Park, Kwangwook

AU - Son, Seoung Bum

AU - Lee, Yong Tak

AU - Kee, Chul Sik

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

AB - Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

UR - https://www.scopus.com/pages/publications/85059532829

U2 - 10.1063/1.5079668

DO - 10.1063/1.5079668

M3 - Journal article

AN - SCOPUS:85059532829

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 12

M1 - 125027

ER -

Strong emission of THz radiation from GaAs microstructures on Si

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