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Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO 2 micro-pillars with tapered sidewalls

  • Ming Ma*
  • , Jaehee Cho
  • , E. Fred Schubert
  • , Yongjo Park
  • , Gi Bum Kim
  • , Cheolsoo Sone
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Samsung

Research output: Contribution to journalJournal articlepeer-review

Abstract

An effective method to enhance the light extraction for GaInN light-emitting diodes (LEDs) is reported. The method employs TiO 2 micro-pillars with tapered sidewalls, which are refractive-index-matched to the underlying GaN. The tapered micro-pillars are fabricated by using reflowed photoresist as mask during CHF 3-based dry etch, with O 2 added in order to precisely control the taper angle. LEDs patterned with TiO 2 micro-pillars with tapered sidewalls show a 100 enhancement in light-output power over planar reference LEDs. The measured results are in good agreement with ray-tracing simulations, showing strong potential of optical surfaces that are controlled in terms of refractive index and lateral structure.

Original languageEnglish
Article number141105
JournalApplied Physics Letters
Volume101
Issue number14
DOIs
StatePublished - 2012.10.1

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