Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001)

Y. C. Jang; D. O. Shin; K. S. Kim; K. H. Shim; N. E. Lee; S. P. Youn; K. J. Roh; Y. H. Roh

doi:10.1116/1.1368665

Structural and electrical characteristics of chemical vapor deposited W/n-Si_0.83Ge_0.17/Si(001) and chemical vapor deposited WSi_x/n-Si_0.83Ge_0.17/Si(001)

Y. C. Jang
, D. O. Shin
, K. S. Kim
, K. H. Shim
, N. E. Lee^*
, S. P. Youn
, K. J. Roh
, Y. H. Roh

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Sungkyunkwan University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The structural and electrical properties of chemical vapor deposited (CVD) semiconducting silicon compounds were studied by structural, chemical and electrical characterizations using X ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). The interfaces obtained showed the no penetration of tungsten into the silicon alloy layers due to the silicon and germanium reduction reactions at the initial stage of tungsten film growth. The electrical properties of Schottky diodes made out of the alloy was characterized by current-voltage measurements.

Original language	English
Pages (from-to)	1046-1051
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1368665
State	Published - 2001.07

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Jang, Y. C., Shin, D. O., Kim, K. S., Shim, K. H., Lee, N. E., Youn, S. P., Roh, K. J., & Roh, Y. H. (2001). Structural and electrical characteristics of chemical vapor deposited W/n-Si_0.83Ge_0.17/Si(001) and chemical vapor deposited WSi_x/n-Si_0.83Ge_0.17/Si(001). Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 19(4), 1046-1051. https://doi.org/10.1116/1.1368665

@article{d98326cece6a4379b29ee8c8c38b154b,

title = "Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001)",

abstract = "The structural and electrical properties of chemical vapor deposited (CVD) semiconducting silicon compounds were studied by structural, chemical and electrical characterizations using X ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). The interfaces obtained showed the no penetration of tungsten into the silicon alloy layers due to the silicon and germanium reduction reactions at the initial stage of tungsten film growth. The electrical properties of Schottky diodes made out of the alloy was characterized by current-voltage measurements.",

author = "Jang, \{Y. C.\} and Shin, \{D. O.\} and Kim, \{K. S.\} and Shim, \{K. H.\} and Lee, \{N. E.\} and Youn, \{S. P.\} and Roh, \{K. J.\} and Roh, \{Y. H.\}",

year = "2001",

month = jul,

doi = "10.1116/1.1368665",

language = "English",

volume = "19",

pages = "1046--1051",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

number = "4",

}

Jang, YC, Shin, DO, Kim, KS, Shim, KH, Lee, NE, Youn, SP, Roh, KJ & Roh, YH 2001, 'Structural and electrical characteristics of chemical vapor deposited W/n-Si_0.83Ge_0.17/Si(001) and chemical vapor deposited WSi_x/n-Si_0.83Ge_0.17/Si(001)', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 19, no. 4, pp. 1046-1051. https://doi.org/10.1116/1.1368665

Structural and electrical characteristics of chemical vapor deposited W/n-Si_0.83Ge_0.17/Si(001) and chemical vapor deposited WSi_x/n-Si_0.83Ge_0.17/Si(001). / Jang, Y. C.; Shin, D. O.; Kim, K. S. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 19, No. 4, 07.2001, p. 1046-1051.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001)

AU - Jang, Y. C.

AU - Shin, D. O.

AU - Kim, K. S.

AU - Shim, K. H.

AU - Lee, N. E.

AU - Youn, S. P.

AU - Roh, K. J.

AU - Roh, Y. H.

PY - 2001/7

Y1 - 2001/7

N2 - The structural and electrical properties of chemical vapor deposited (CVD) semiconducting silicon compounds were studied by structural, chemical and electrical characterizations using X ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). The interfaces obtained showed the no penetration of tungsten into the silicon alloy layers due to the silicon and germanium reduction reactions at the initial stage of tungsten film growth. The electrical properties of Schottky diodes made out of the alloy was characterized by current-voltage measurements.

AB - The structural and electrical properties of chemical vapor deposited (CVD) semiconducting silicon compounds were studied by structural, chemical and electrical characterizations using X ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). The interfaces obtained showed the no penetration of tungsten into the silicon alloy layers due to the silicon and germanium reduction reactions at the initial stage of tungsten film growth. The electrical properties of Schottky diodes made out of the alloy was characterized by current-voltage measurements.

UR - https://www.scopus.com/pages/publications/0035391964

U2 - 10.1116/1.1368665

DO - 10.1116/1.1368665

M3 - Journal article

AN - SCOPUS:0035391964

SN - 0734-2101

VL - 19

SP - 1046

EP - 1051

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Structural and electrical characteristics of chemical vapor deposited W/n-Si_0.83Ge_0.17/Si(001) and chemical vapor deposited WSi_x/n-Si_0.83Ge_0.17/Si(001)

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