Structural and electrical characterization of intrinsic n-type In2O3 nanowires

Gunho Jo; Woong Ki Hong; Jongsun Maeng; Tae Wook Kim; Gunuk Wang; Ahnsook Yoon; Soon Shin Kwon; Sunghoon Song; Takhee Lee

doi:10.1016/j.colsurfa.2007.04.166

Structural and electrical characterization of intrinsic n-type In₂O₃ nanowires

Gunho Jo
, Woong Ki Hong
, Jongsun Maeng
, Tae Wook Kim
, Gunuk Wang
, Ahnsook Yoon
, Soon Shin Kwon
, Sunghoon Song
, Takhee Lee^*

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

36 Scopus citations

Abstract

We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 10⁴ at drain bias 0.1 V, electron carrier density of 3.7 × 10¹⁷ cm^-3 and an electron mobility of 85 cm²/V s.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Colloids and Surfaces A: Physicochemical and Engineering Aspects
Volume	313-314
DOIs	https://doi.org/10.1016/j.colsurfa.2007.04.166
State	Published - 2008.02.1

Keywords

Field effect transistor
Indium oxide
Nanoelectronics
Nanowire

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10.1016/j.colsurfa.2007.04.166

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@article{4906a3ed22334c45bbd78c7c05c6ca28,

title = "Structural and electrical characterization of intrinsic n-type In2O3 nanowires",

abstract = "We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm-3 and an electron mobility of 85 cm2/V s.",

keywords = "Field effect transistor, Indium oxide, Nanoelectronics, Nanowire",

author = "Gunho Jo and Hong, \{Woong Ki\} and Jongsun Maeng and Kim, \{Tae Wook\} and Gunuk Wang and Ahnsook Yoon and Kwon, \{Soon Shin\} and Sunghoon Song and Takhee Lee",

year = "2008",

month = feb,

day = "1",

doi = "10.1016/j.colsurfa.2007.04.166",

language = "English",

volume = "313-314",

pages = "308--311",

journal = "Colloids and Surfaces A: Physicochemical and Engineering Aspects",

issn = "0927-7757",

}

TY - JOUR

T1 - Structural and electrical characterization of intrinsic n-type In2O3 nanowires

AU - Jo, Gunho

AU - Hong, Woong Ki

AU - Maeng, Jongsun

AU - Kim, Tae Wook

AU - Wang, Gunuk

AU - Yoon, Ahnsook

AU - Kwon, Soon Shin

AU - Song, Sunghoon

AU - Lee, Takhee

PY - 2008/2/1

Y1 - 2008/2/1

N2 - We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm-3 and an electron mobility of 85 cm2/V s.

AB - We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm-3 and an electron mobility of 85 cm2/V s.

KW - Field effect transistor

KW - Indium oxide

KW - Nanoelectronics

KW - Nanowire

UR - https://www.scopus.com/pages/publications/37349078280

U2 - 10.1016/j.colsurfa.2007.04.166

DO - 10.1016/j.colsurfa.2007.04.166

M3 - Journal article

AN - SCOPUS:37349078280

SN - 0927-7757

VL - 313-314

SP - 308

EP - 311

JO - Colloids and Surfaces A: Physicochemical and Engineering Aspects

JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects

ER -

Structural and electrical characterization of intrinsic n-type In₂O₃ nanowires

Abstract

Keywords

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