Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO2 film

Chel Jong Choi; Moon Gyu Jang; Yark Yeon Kim; Myung Sim Jeon; Seong Jae Lee; Hyun Doek Yang; Ran Ju Jung; Man Chang; Hyun Sang Hwang

doi:10.1149/1.2727413

Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film

Chel Jong Choi^*
, Moon Gyu Jang
, Yark Yeon Kim
, Myung Sim Jeon
, Seong Jae Lee
, Hyun Doek Yang
, Ran Ju Jung
, Man Chang
, Hyun Sang Hwang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Samsung
Gwangju Institute of Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

Abstract

We have investigated electrical and structural properties of high-pressure hydrogen postannealed (HPHA) Pt-Er alloy metal gate on HfO₂ film. It is shown that the HPHA process causes the removal of micro-voids formed near interface between Pt-Er alloy and HfO₂ films, resulting in the increase of gate electrode contact areas. It is further shown that the HPHA process plays a role in the reduction of PtO_x and the interface trap density, leading to the negative shift of flat-band voltage and the improvement of the HfO₂ interface quality, respectively. By considering the presence of an interfacial layer (IL) between the HfO₂ film and a Si substrate and a negative charge at the HfO₂/IL interface, the effective metal work function (Φ_m,eff) values of the Pt-Er alloy metal gate before and after HPHA are calculated to be ∼ 4.6 and ∼ 4.8 eV, respectively.

Original language	English
Title of host publication	ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publication	New Materials, Processes and Equipment, 3
Publisher	Electrochemical Society Inc.
Pages	295-301
Number of pages	7
Edition	1
ISBN (Electronic)	9781566775502
ISBN (Print)	9781566775502
DOIs	https://doi.org/10.1149/1.2727413
State	Published - 2007
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States Duration: 2007.05.6 → 2007.05.10

Publication series

Name	ECS Transactions
Number	1
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	07.05.6 → 07.05.10

Access to Document

10.1149/1.2727413

Cite this

Choi, C. J., Jang, M. G., Kim, Y. Y., Jeon, M. S., Lee, S. J., Yang, H. D., Jung, R. J., Chang, M., & Hwang, H. S. (2007). Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 295-301). (ECS Transactions; Vol. 6, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.2727413

Choi, Chel Jong ; Jang, Moon Gyu ; Kim, Yark Yeon et al. / Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film. ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. pp. 295-301 (ECS Transactions; 1).

@inproceedings{977528d67eb447a4b453fa2071aea1ce,

title = "Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO2 film",

abstract = "We have investigated electrical and structural properties of high-pressure hydrogen postannealed (HPHA) Pt-Er alloy metal gate on HfO2 film. It is shown that the HPHA process causes the removal of micro-voids formed near interface between Pt-Er alloy and HfO2 films, resulting in the increase of gate electrode contact areas. It is further shown that the HPHA process plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flat-band voltage and the improvement of the HfO2 interface quality, respectively. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the effective metal work function (Φm,eff) values of the Pt-Er alloy metal gate before and after HPHA are calculated to be ∼ 4.6 and ∼ 4.8 eV, respectively.",

author = "Choi, \{Chel Jong\} and Jang, \{Moon Gyu\} and Kim, \{Yark Yeon\} and Jeon, \{Myung Sim\} and Lee, \{Seong Jae\} and Yang, \{Hyun Doek\} and Jung, \{Ran Ju\} and Man Chang and Hwang, \{Hyun Sang\}",

year = "2007",

doi = "10.1149/1.2727413",

language = "English",

isbn = "9781566775502",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "295--301",

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note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

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Choi, CJ, Jang, MG, Kim, YY, Jeon, MS, Lee, SJ, Yang, HD, Jung, RJ, Chang, M & Hwang, HS 2007, Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film. in ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 edn, ECS Transactions, no. 1, vol. 6, Electrochemical Society Inc., pp. 295-301, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting, Chicago, IL, United States, 07.05.6. https://doi.org/10.1149/1.2727413

Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film. / Choi, Chel Jong; Jang, Moon Gyu; Kim, Yark Yeon et al.
ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. p. 295-301 (ECS Transactions; Vol. 6, No. 1).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO2 film

AU - Choi, Chel Jong

AU - Jang, Moon Gyu

AU - Kim, Yark Yeon

AU - Jeon, Myung Sim

AU - Lee, Seong Jae

AU - Yang, Hyun Doek

AU - Jung, Ran Ju

AU - Chang, Man

AU - Hwang, Hyun Sang

PY - 2007

Y1 - 2007

N2 - We have investigated electrical and structural properties of high-pressure hydrogen postannealed (HPHA) Pt-Er alloy metal gate on HfO2 film. It is shown that the HPHA process causes the removal of micro-voids formed near interface between Pt-Er alloy and HfO2 films, resulting in the increase of gate electrode contact areas. It is further shown that the HPHA process plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flat-band voltage and the improvement of the HfO2 interface quality, respectively. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the effective metal work function (Φm,eff) values of the Pt-Er alloy metal gate before and after HPHA are calculated to be ∼ 4.6 and ∼ 4.8 eV, respectively.

AB - We have investigated electrical and structural properties of high-pressure hydrogen postannealed (HPHA) Pt-Er alloy metal gate on HfO2 film. It is shown that the HPHA process causes the removal of micro-voids formed near interface between Pt-Er alloy and HfO2 films, resulting in the increase of gate electrode contact areas. It is further shown that the HPHA process plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flat-band voltage and the improvement of the HfO2 interface quality, respectively. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the effective metal work function (Φm,eff) values of the Pt-Er alloy metal gate before and after HPHA are calculated to be ∼ 4.6 and ∼ 4.8 eV, respectively.

UR - https://www.scopus.com/pages/publications/45849102086

U2 - 10.1149/1.2727413

DO - 10.1149/1.2727413

M3 - Conference paper

AN - SCOPUS:45849102086

SN - 9781566775502

T3 - ECS Transactions

SP - 295

EP - 301

BT - ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS

PB - Electrochemical Society Inc.

T2 - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Choi CJ, Jang MG, Kim YY, Jeon MS, Lee SJ, Yang HD et al. Structural and electrical properties of high pressure hydrogen post-annealed Pt-Er alloy metal gate on HfO₂ film. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. Electrochemical Society Inc. 2007. p. 295-301. (ECS Transactions; 1). doi: 10.1149/1.2727413