Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

D. O. Shin; Y. S. Ahn; S. H. Ban; N. E. Lee; B. T. Ahn; S. H. Kim; K. H. Shim; J. Y. Kang

doi:10.1016/S0921-5107(01)00799-1

Structural and electrical properties of MOCVD-cobalt silicide on p-Si_0.83Ge_0.17/Si(001)

D. O. Shin
, Y. S. Ahn
, S. H. Ban
, N. E. Lee^*
, B. T. Ahn
, S. H. Kim
, K. H. Shim
, J. Y. Kang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Sungkyunkwan University
Korea Advanced Institute of Science and Technology
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

Structural, chemical and electrical properties of cobalt silicide/p-Si_0.83Ge_0.17/Si(001) were investigated by various analytical methods. Analyses of the as-deposited cobalt silicide layers on p-Si_0.83Ge_0.17/n-Si(001) at the growth temperature T_s = 650 °C by metal organic chemical vapor deposition (MOCVD) using cyclopentadienyl dicarbonyl cobalt (Co(η⁵-C₅H₅)(CO)₂), revealed epitaxial CoSi₂ phases, as well as C-containing high resistive phases. Rapid thermal annealing at elevated temperature of 800 °C increased the fraction of epitaxial CoSi₂ phase by the reaction of the remaining SiGe layers with Co supplied from the top surface layer, resulting in the reduction in the sheet resistance from ≅ 230 (as-deposited) to ≅ 30 Ω/□.

Original language	English
Pages (from-to)	279-283
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	89
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00799-1
State	Published - 2002.02.14

Keywords

Cobalt disilicide
MOCVD
SiGe alloy
Silicide

Access to Document

10.1016/S0921-5107(01)00799-1

Cite this

@article{ea8ecb3691164bdab870ac60bc44dd13,

title = "Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)",

abstract = "Structural, chemical and electrical properties of cobalt silicide/p-Si0.83Ge0.17/Si(001) were investigated by various analytical methods. Analyses of the as-deposited cobalt silicide layers on p-Si0.83Ge0.17/n-Si(001) at the growth temperature Ts = 650 °C by metal organic chemical vapor deposition (MOCVD) using cyclopentadienyl dicarbonyl cobalt (Co(η5-C5H5)(CO)2), revealed epitaxial CoSi2 phases, as well as C-containing high resistive phases. Rapid thermal annealing at elevated temperature of 800 °C increased the fraction of epitaxial CoSi2 phase by the reaction of the remaining SiGe layers with Co supplied from the top surface layer, resulting in the reduction in the sheet resistance from ≅ 230 (as-deposited) to ≅ 30 Ω/□.",

keywords = "Cobalt disilicide, MOCVD, SiGe alloy, Silicide",

author = "Shin, \{D. O.\} and Ahn, \{Y. S.\} and Ban, \{S. H.\} and Lee, \{N. E.\} and Ahn, \{B. T.\} and Kim, \{S. H.\} and Shim, \{K. H.\} and Kang, \{J. Y.\}",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(01)00799-1",

language = "English",

volume = "89",

pages = "279--283",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

number = "1-3",

}

TY - JOUR

T1 - Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

AU - Shin, D. O.

AU - Ahn, Y. S.

AU - Ban, S. H.

AU - Lee, N. E.

AU - Ahn, B. T.

AU - Kim, S. H.

AU - Shim, K. H.

AU - Kang, J. Y.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - Structural, chemical and electrical properties of cobalt silicide/p-Si0.83Ge0.17/Si(001) were investigated by various analytical methods. Analyses of the as-deposited cobalt silicide layers on p-Si0.83Ge0.17/n-Si(001) at the growth temperature Ts = 650 °C by metal organic chemical vapor deposition (MOCVD) using cyclopentadienyl dicarbonyl cobalt (Co(η5-C5H5)(CO)2), revealed epitaxial CoSi2 phases, as well as C-containing high resistive phases. Rapid thermal annealing at elevated temperature of 800 °C increased the fraction of epitaxial CoSi2 phase by the reaction of the remaining SiGe layers with Co supplied from the top surface layer, resulting in the reduction in the sheet resistance from ≅ 230 (as-deposited) to ≅ 30 Ω/□.

AB - Structural, chemical and electrical properties of cobalt silicide/p-Si0.83Ge0.17/Si(001) were investigated by various analytical methods. Analyses of the as-deposited cobalt silicide layers on p-Si0.83Ge0.17/n-Si(001) at the growth temperature Ts = 650 °C by metal organic chemical vapor deposition (MOCVD) using cyclopentadienyl dicarbonyl cobalt (Co(η5-C5H5)(CO)2), revealed epitaxial CoSi2 phases, as well as C-containing high resistive phases. Rapid thermal annealing at elevated temperature of 800 °C increased the fraction of epitaxial CoSi2 phase by the reaction of the remaining SiGe layers with Co supplied from the top surface layer, resulting in the reduction in the sheet resistance from ≅ 230 (as-deposited) to ≅ 30 Ω/□.

KW - Cobalt disilicide

KW - MOCVD

KW - SiGe alloy

KW - Silicide

UR - https://www.scopus.com/pages/publications/0037074860

U2 - 10.1016/S0921-5107(01)00799-1

DO - 10.1016/S0921-5107(01)00799-1

M3 - Journal article

AN - SCOPUS:0037074860

SN - 0921-5107

VL - 89

SP - 279

EP - 283

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Structural and electrical properties of MOCVD-cobalt silicide on p-Si_0.83Ge_0.17/Si(001)

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this