Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

C. H. Kwak; Y. B. Lee; S. Y. Seo; S. H. Kim; C. I. Park; B. H. Kim; D. W. Jeong; J. J. Kim; Zhenlan Jin; S. W. Han

doi:10.1016/j.cap.2010.11.068

Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

C. H. Kwak
, Y. B. Lee
, S. Y. Seo
, S. H. Kim
, C. I. Park
, B. H. Kim
, D. W. Jeong
, J. J. Kim
, Zhenlan Jin
, S. W. Han^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

This study examined the micro-structural and electrical properties of nitrogen-ion implanted ZnO nanorods. Nitrogen ions (N⁺s) with energy of 50 keV and beam flux of 10¹⁶ particles/cm² were implanted on vertically-aligned ZnO nanorods. Energy dispersive X-ray spectroscopy measurements showed that N⁺s were spread uniformly over the nanorods. Extended X-ray absorption fine structure (EXAFS) measurements suggested that the implanted N⁺s had partially substituted for the oxygen sites. The I-V characteristic curves showed that the N ⁺-implanted nanorods were n-type. Moreover, annealing at 800 °C enhanced the charge carrier density in the nanorods by 10-fold, compared to the N⁺-implanted and unannealed ZnO nanorods.

Original language	English
Pages (from-to)	S328-S332
Journal	Current Applied Physics
Volume	11
Issue number	3 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.11.068
State	Published - 2011.05

Keywords

EXAFS
I-V
Ion implantation
Nanorod
Structure
ZnO

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.cap.2010.11.068

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@article{ac64eb4802ee4b8eabc3a65ae06e52c4,

title = "Structural and electrical properties of nitrogen-ion implanted ZnO nanorods",

abstract = "This study examined the micro-structural and electrical properties of nitrogen-ion implanted ZnO nanorods. Nitrogen ions (N+s) with energy of 50 keV and beam flux of 1016 particles/cm2 were implanted on vertically-aligned ZnO nanorods. Energy dispersive X-ray spectroscopy measurements showed that N+s were spread uniformly over the nanorods. Extended X-ray absorption fine structure (EXAFS) measurements suggested that the implanted N+s had partially substituted for the oxygen sites. The I-V characteristic curves showed that the N +-implanted nanorods were n-type. Moreover, annealing at 800 °C enhanced the charge carrier density in the nanorods by 10-fold, compared to the N+-implanted and unannealed ZnO nanorods.",

keywords = "EXAFS, I-V, Ion implantation, Nanorod, Structure, ZnO",

author = "Kwak, \{C. H.\} and Lee, \{Y. B.\} and Seo, \{S. Y.\} and Kim, \{S. H.\} and Park, \{C. I.\} and Kim, \{B. H.\} and Jeong, \{D. W.\} and Kim, \{J. J.\} and Zhenlan Jin and Han, \{S. W.\}",

year = "2011",

month = may,

doi = "10.1016/j.cap.2010.11.068",

language = "English",

volume = "11",

pages = "S328--S332",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "3 SUPPL.",

}

TY - JOUR

T1 - Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

AU - Kwak, C. H.

AU - Lee, Y. B.

AU - Seo, S. Y.

AU - Kim, S. H.

AU - Park, C. I.

AU - Kim, B. H.

AU - Jeong, D. W.

AU - Kim, J. J.

AU - Jin, Zhenlan

AU - Han, S. W.

PY - 2011/5

Y1 - 2011/5

N2 - This study examined the micro-structural and electrical properties of nitrogen-ion implanted ZnO nanorods. Nitrogen ions (N+s) with energy of 50 keV and beam flux of 1016 particles/cm2 were implanted on vertically-aligned ZnO nanorods. Energy dispersive X-ray spectroscopy measurements showed that N+s were spread uniformly over the nanorods. Extended X-ray absorption fine structure (EXAFS) measurements suggested that the implanted N+s had partially substituted for the oxygen sites. The I-V characteristic curves showed that the N +-implanted nanorods were n-type. Moreover, annealing at 800 °C enhanced the charge carrier density in the nanorods by 10-fold, compared to the N+-implanted and unannealed ZnO nanorods.

AB - This study examined the micro-structural and electrical properties of nitrogen-ion implanted ZnO nanorods. Nitrogen ions (N+s) with energy of 50 keV and beam flux of 1016 particles/cm2 were implanted on vertically-aligned ZnO nanorods. Energy dispersive X-ray spectroscopy measurements showed that N+s were spread uniformly over the nanorods. Extended X-ray absorption fine structure (EXAFS) measurements suggested that the implanted N+s had partially substituted for the oxygen sites. The I-V characteristic curves showed that the N +-implanted nanorods were n-type. Moreover, annealing at 800 °C enhanced the charge carrier density in the nanorods by 10-fold, compared to the N+-implanted and unannealed ZnO nanorods.

KW - EXAFS

KW - I-V

KW - Ion implantation

KW - Nanorod

KW - Structure

KW - ZnO

UR - https://www.scopus.com/pages/publications/80255138057

U2 - 10.1016/j.cap.2010.11.068

DO - 10.1016/j.cap.2010.11.068

M3 - Journal article

AN - SCOPUS:80255138057

SN - 1567-1739

VL - 11

SP - S328-S332

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3 SUPPL.

ER -

Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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