Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

S. V. Jagadeesh Chandra; Chel Jong Choi; S. Uthanna; G. Mohan Rao

doi:10.1016/j.mssp.2010.08.002

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

S. V. Jagadeesh Chandra
, Chel Jong Choi^*
, S. Uthanna
, G. Mohan Rao

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Sri Venkateswara University
Indian Institute of Science Bangalore

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta₂O₅) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta₂O₅. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta₂O₅/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm^-2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was PooleFrenkel.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	13
Issue number	4
DOIs	https://doi.org/10.1016/j.mssp.2010.08.002
State	Published - 2010.12

Keywords

Electrical properties
Metalinsulatorsemiconductor structure
Sputtering
Tantalum oxide

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science
Physics & Astronomy

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10.1016/j.mssp.2010.08.002

Cite this

@article{9641a9267f83444799abad9eda90f6a5,

title = "Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing",

abstract = "The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm-2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was PooleFrenkel.",

keywords = "Electrical properties, Metalinsulatorsemiconductor structure, Sputtering, Tantalum oxide",

author = "\{Jagadeesh Chandra\}, \{S. V.\} and Choi, \{Chel Jong\} and S. Uthanna and \{Mohan Rao\}, G.",

year = "2010",

month = dec,

doi = "10.1016/j.mssp.2010.08.002",

language = "English",

volume = "13",

pages = "245--251",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "4",

}

TY - JOUR

T1 - Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films

T2 - Influence of post-deposition annealing

AU - Jagadeesh Chandra, S. V.

AU - Choi, Chel Jong

AU - Uthanna, S.

AU - Mohan Rao, G.

PY - 2010/12

Y1 - 2010/12

N2 - The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm-2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was PooleFrenkel.

AB - The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm-2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was PooleFrenkel.

KW - Electrical properties

KW - Metalinsulatorsemiconductor structure

KW - Sputtering

KW - Tantalum oxide

UR - https://www.scopus.com/pages/publications/79952619576

U2 - 10.1016/j.mssp.2010.08.002

DO - 10.1016/j.mssp.2010.08.002

M3 - Journal article

AN - SCOPUS:79952619576

SN - 1369-8001

VL - 13

SP - 245

EP - 251

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4

ER -

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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