Abstract
RF magnetron sputtering technique was employed for deposition of tantalum oxide films on p-type silicon substrates by sputtering of pure tantalum oxide target in the presence of oxygen and argon gases at a temperature of 303 K. X-ray photoelectron spectroscopic and X-ray diffraction studies indicated that the films annealed at 773 K were stoichiometric and polycrystalline respectively. The accumulation capacitance for the devices in a structure of Al/Ta2O5/p-Si has been decreased noticeably lower values for the devices annealed at high temperatures. Improved currentvoltage characteristics were observed for all annealed devices with PooleFrenkel conduction mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 749-753 |
| Number of pages | 5 |
| Journal | International Journal of Nanoscience |
| Volume | 10 |
| Issue number | 4-5 |
| DOIs | |
| State | Published - 2011.08 |
Keywords
- capacitance
- conduction mechanism
- MOS structure
- RF magnetron sputtering
- thin film
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Computer Science & Information Systems
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Data Science
- Engineering - Chemical
- Physics & Astronomy
- Biological Sciences
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