Structural and optical characteristics of Si doped and Si-Zn codoped InGaN films grown by metalorganic chemical vapor deposition

Si doped and Si-Zn codoped InGaN films were grown by low pressure metalorganic chemical vapor deposition. The InGaN surface is characterized by hexagonal spiral growth around threading dislocation that Si dopant act on core of InGaN island with screw component. In solid solubility is related dopant flow. Zn related donor-acceptor emission was observed at photoluminescence spectra. The 2-dimensional high resolution x-ray reciprocal space mapping reveals InGaN/GaN pseudomorphic compressive strained structures, indicating coherency of InGaN/GaN heterostructures.