Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy

H. S. Lee; H. L. Park; T. W. Kim

doi:10.1016/j.jcrysgro.2006.04.083

Structural and optical properties of Cd_xZn_1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy

H. S. Lee
, H. L. Park^*
, T. W. Kim

^*Corresponding author for this work

Department of Physics

Yonsei University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We have studied structural and optical properties of self-assembled Cd_0.6Zn_0.4Te/ZnTe quantum dots (QDs) grown on Si(1 0 0) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (1 0 0) orientation. The atomic force microscopy images showed that Cd_0.6Zn_0.4Te/ZnTe QDs were formed on Si(1 0 0) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd_0.6Zn_0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd_0.6Zn_0.4Te/ZnTe QDs grown on Si(1 0 0) substrates.

Original language	English
Pages (from-to)	10-13
Number of pages	4
Journal	Journal of Crystal Growth
Volume	292
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.04.083
State	Published - 2006.06.15

Keywords

A1. Atomic force microscopy
A1. Nanostructures
A1. X-ray diffraction
A3. Molecular beam epitaxy
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2006.04.083

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@article{2c7bfa81f0e44656933159d2fd9c0689,

title = "Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy",

abstract = "We have studied structural and optical properties of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si(1 0 0) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (1 0 0) orientation. The atomic force microscopy images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on Si(1 0 0) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd0.6Zn0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd0.6Zn0.4Te/ZnTe QDs grown on Si(1 0 0) substrates.",

keywords = "A1. Atomic force microscopy, A1. Nanostructures, A1. X-ray diffraction, A3. Molecular beam epitaxy, B2. Semiconducting ternary compounds",

author = "Lee, \{H. S.\} and Park, \{H. L.\} and Kim, \{T. W.\}",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2006.04.083",

language = "English",

volume = "292",

pages = "10--13",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

}

TY - JOUR

T1 - Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy

AU - Lee, H. S.

AU - Park, H. L.

AU - Kim, T. W.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - We have studied structural and optical properties of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si(1 0 0) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (1 0 0) orientation. The atomic force microscopy images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on Si(1 0 0) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd0.6Zn0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd0.6Zn0.4Te/ZnTe QDs grown on Si(1 0 0) substrates.

AB - We have studied structural and optical properties of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si(1 0 0) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (1 0 0) orientation. The atomic force microscopy images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on Si(1 0 0) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd0.6Zn0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd0.6Zn0.4Te/ZnTe QDs grown on Si(1 0 0) substrates.

KW - A1. Atomic force microscopy

KW - A1. Nanostructures

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting ternary compounds

UR - https://www.scopus.com/pages/publications/33745671320

U2 - 10.1016/j.jcrysgro.2006.04.083

DO - 10.1016/j.jcrysgro.2006.04.083

M3 - Journal article

AN - SCOPUS:33745671320

SN - 0022-0248

VL - 292

SP - 10

EP - 13

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Structural and optical properties of Cd_xZn_1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy

Abstract

Keywords

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