Structural and optical properties of GaN using the lateral epitaxy of patterned Si substrate

We have grown and characterized high-quality GaN epilayers on patterned Si(111) by using a single, continuous metalorganic chemical vapor deposition (MOCVD). The lateral epitaxy on patterned substrate (LEPS) technique employs growth from periodic, parallel stripes which are formed by etching the substrate. In this technique, neither a selective growth mask nor a patterned GaN seed layer was used. The band-edge emission intensity of the PL in the terrace region was similar when compared to that of the trench region. However, the impurity peak intensity clearly decreased at the trench region. This study reveals that the reduction in threading dislocation density along the trench region improves the luminescence efficiency.