Abstract
We present the structural and optical properties of Zn1-xMg xO thin films studied using x-ray diffraction (XRD), extended x-ray absorption fine structure (EXAFS), and photoluminescence (PL) measurements. The Zn1-xMgxO films on sapphire [0001] substrates were fabricated with metal organic chemical vapor deposition (MOCVD). The XRD measurements showed that the Zn1-xMgxO films (x ≤ 0.05) had a wurtzite structure without any MgO phase and were epitaxially grown along the c-axis of the Al2O3 substrate. The lattice constant of the Zn0.95Mg0.05O film shrank by 0.023 Å, compared with that of ZnO crystals. From the EXAFS measurements on the Zn 1-xMgxO films at Zn K-edge, we found a substantial amount of distortion in the bond length of Zn-Zn pairs with a small amount of Mg substitution on the Zn site. The PL measurements showed a gradual increment of the main exciton transitions from 3.36 eV (x = 0.0) to 3.57 eV (x = 0.05) at 10 K. We also observed a strong deep-level emission near 2.3 eV from the specimen with x = 0.05.
| Original language | English |
|---|---|
| Pages (from-to) | 1680-1684 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 35 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2006.08 |
Keywords
- Bandgap
- Extended x-ray absorption fine structure (EXAFS)
- Film
- Metal organic chemical vapor deposition (MOCVD)
- Nanorod
- Photoluminescence (PL)
- ZnMgO
- ZnO
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Physics & Astronomy
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