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Structural characterization of AgGaS2-type photocatalysts for hydrogen production from water under visible light

  • Sun Hee Choi*
  • , Jum Suk Jang
  • , Namsoo Shin
  • , Jae Sung Lee
  • *Corresponding author for this work
  • Pohang University of Science and Technology

Research output: Contribution to conferenceConference paperpeer-review

Abstract

Bulky AgGaS2 was synthesized as a p-type semiconductor photocatalyst by a conventional solid state reaction under N2 flow for hydrogen production under visible light. To remove the impurity phase involved in the synthesized material and improve its crystallinity, the material was treated at various temperatures of 873-1123 K under H2S flow. Impurity phases were identified as β-Ga2O3 and Ag9GaS6 with Rietveld analysis of XRD, and the local coordination structure around gallium atom in AgGaS2 was investigated by EXAFS. As the H2S-treatment temperature increased, the contribution from impurity phase was diminished. When the temperature reached 1123 K, the impurity phases were completely removed and the material showed the highest photocatalytic activity.

Original languageEnglish
Title of host publicationX-RAY ABSORPTION FINE STRUCTURE - XAFS13
Subtitle of host publication13th International Conference
Pages628-630
Number of pages3
DOIs
StatePublished - 2007
EventX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States
Duration: 2006.07.92006.07.14

Publication series

NameAIP Conference Proceedings
Volume882
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
Country/TerritoryUnited States
CityStanford, CA
Period06.07.906.07.14

Keywords

  • AgGaS
  • EXAFS
  • Impurity phase
  • p-type semiconductor photocatalyst

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