Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young Woo Ok; Chel Jong Choi; Tae Yeon Seong; K. Uesugi; I. Suemune

doi:10.1007/s11664-001-0079-y

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young Woo Ok
, Chel Jong Choi
, Tae Yeon Seong
, K. Uesugi
, I. Suemune

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology
Hokkaido University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs_1-xN_x layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

Original language	English
Article number	79
Pages (from-to)	900-906
Number of pages	7
Journal	Journal of Electronic Materials
Volume	30
Issue number	7
DOIs	https://doi.org/10.1007/s11664-001-0079-y
State	Published - 2001

Keywords

Atomic force microscopy (AFM)
Doping
GaAsN
Metalorganic molecular beam epitaxy (MOMBE)
Transmission electron microscopy (TEM)

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10.1007/s11664-001-0079-y

Cite this

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title = "Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy",

abstract = "Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75\%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.",

keywords = "Atomic force microscopy (AFM), Doping, GaAsN, Metalorganic molecular beam epitaxy (MOMBE), Transmission electron microscopy (TEM)",

author = "Ok, \{Young Woo\} and Choi, \{Chel Jong\} and Seong, \{Tae Yeon\} and K. Uesugi and I. Suemune",

year = "2001",

doi = "10.1007/s11664-001-0079-y",

language = "English",

volume = "30",

pages = "900--906",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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TY - JOUR

T1 - Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

AU - Ok, Young Woo

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Uesugi, K.

AU - Suemune, I.

PY - 2001

Y1 - 2001

N2 - Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

AB - Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

KW - Atomic force microscopy (AFM)

KW - Doping

KW - GaAsN

KW - Metalorganic molecular beam epitaxy (MOMBE)

KW - Transmission electron microscopy (TEM)

UR - https://www.scopus.com/pages/publications/0035391649

U2 - 10.1007/s11664-001-0079-y

DO - 10.1007/s11664-001-0079-y

M3 - Journal article

AN - SCOPUS:0035391649

SN - 0361-5235

VL - 30

SP - 900

EP - 906

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

M1 - 79

ER -

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

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Keywords

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