Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer

Kyungsun Ryu; Young Woo Ok; Chel Jong Choi; Ajeet Rohatgi

doi:10.1109/PVSC.2013.6745019

Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer

Kyungsun Ryu
, Young Woo Ok
, Chel Jong Choi
, Ajeet Rohatgi

Department of Semiconductor Science and Technology

Georgia Institute of Technology

Research output: Contribution to conference › Conference paper › peer-review

1 Scopus citations

Abstract

Various boron diffusion techniques are being investigated to fabricate n-type Si cells. Thermal oxidation is often used in photovoltaic to remove boron-rich layer (BRL) formed as a byproduct of boron diffusion because it interferes with surface passivation. However, oxidizing the BRL can cause a severe degradation in bulk lifetime. In this paper, high resolution electron microscopy (HREM) was performed to detect the presence of BRL after B diffusion and its removal after subsequent oxidation. In addition, bulk lifetime of n-type Si with BRL was measured after various oxidation conditions to systematically investigate the BRL-induced lifetime degradation mechanism in n-Si. The primary metal impurity responsible for the bulk lifetime degradation was concluded to be Fe in this study.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2655-2658
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6745019
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 2013.06.16 → 2013.06.21

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	13.06.16 → 13.06.21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Boron-rich layer
Bulk lifetime
N-type silicon
Thermal oxidation

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Computer Science & Information Systems
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/PVSC.2013.6745019

Cite this

Ryu, K., Ok, Y. W., Choi, C. J., & Rohatgi, A. (2013). Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2655-2658). Article 6745019 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745019

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title = "Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer",

abstract = "Various boron diffusion techniques are being investigated to fabricate n-type Si cells. Thermal oxidation is often used in photovoltaic to remove boron-rich layer (BRL) formed as a byproduct of boron diffusion because it interferes with surface passivation. However, oxidizing the BRL can cause a severe degradation in bulk lifetime. In this paper, high resolution electron microscopy (HREM) was performed to detect the presence of BRL after B diffusion and its removal after subsequent oxidation. In addition, bulk lifetime of n-type Si with BRL was measured after various oxidation conditions to systematically investigate the BRL-induced lifetime degradation mechanism in n-Si. The primary metal impurity responsible for the bulk lifetime degradation was concluded to be Fe in this study.",

keywords = "Boron-rich layer, Bulk lifetime, N-type silicon, Thermal oxidation",

author = "Kyungsun Ryu and Ok, \{Young Woo\} and Choi, \{Chel Jong\} and Ajeet Rohatgi",

year = "2013",

doi = "10.1109/PVSC.2013.6745019",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2655--2658",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Ryu, K, Ok, YW, Choi, CJ & Rohatgi, A 2013, Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745019, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2655-2658, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 13.06.16. https://doi.org/10.1109/PVSC.2013.6745019

Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer. / Ryu, Kyungsun; Ok, Young Woo; Choi, Chel Jong et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2655-2658 6745019 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer

AU - Ryu, Kyungsun

AU - Ok, Young Woo

AU - Choi, Chel Jong

AU - Rohatgi, Ajeet

PY - 2013

Y1 - 2013

N2 - Various boron diffusion techniques are being investigated to fabricate n-type Si cells. Thermal oxidation is often used in photovoltaic to remove boron-rich layer (BRL) formed as a byproduct of boron diffusion because it interferes with surface passivation. However, oxidizing the BRL can cause a severe degradation in bulk lifetime. In this paper, high resolution electron microscopy (HREM) was performed to detect the presence of BRL after B diffusion and its removal after subsequent oxidation. In addition, bulk lifetime of n-type Si with BRL was measured after various oxidation conditions to systematically investigate the BRL-induced lifetime degradation mechanism in n-Si. The primary metal impurity responsible for the bulk lifetime degradation was concluded to be Fe in this study.

AB - Various boron diffusion techniques are being investigated to fabricate n-type Si cells. Thermal oxidation is often used in photovoltaic to remove boron-rich layer (BRL) formed as a byproduct of boron diffusion because it interferes with surface passivation. However, oxidizing the BRL can cause a severe degradation in bulk lifetime. In this paper, high resolution electron microscopy (HREM) was performed to detect the presence of BRL after B diffusion and its removal after subsequent oxidation. In addition, bulk lifetime of n-type Si with BRL was measured after various oxidation conditions to systematically investigate the BRL-induced lifetime degradation mechanism in n-Si. The primary metal impurity responsible for the bulk lifetime degradation was concluded to be Fe in this study.

KW - Boron-rich layer

KW - Bulk lifetime

KW - N-type silicon

KW - Thermal oxidation

UR - https://www.scopus.com/pages/publications/84896483580

U2 - 10.1109/PVSC.2013.6745019

DO - 10.1109/PVSC.2013.6745019

M3 - Conference paper

AN - SCOPUS:84896483580

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2655

EP - 2658

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer

Abstract

Publication series

Conference

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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