@inproceedings{09fe0ee87c1f422fbaec2c68d41da77e,
title = "Study of the relationship between SiH rotational temperature and film crystallinity deposited by SiH4-H2 plasma",
abstract = "Relationship between rotational temperature obtained from SiH molecular emission spectrum and film crystallinity was studied in various plasma operation conditions. As increasing input power and H2/SiH4 gas ratio, both the rotational temperature and crystallinity were increased. On the other hand, the correlation between the rotational temperature and crystallinity was not observed with respect to gas pressure variation. Based on the result, the measurement of rotational temperature would be used as one of the in-situ indication method for film crystallinity during silicon thin film deposition in certain conditions.",
author = "Moon, \{Se Youn\} and Kim, \{Woo Young\} and Sehwon Ahn and Heonmin Lee",
year = "2010",
language = "English",
isbn = "9781617827020",
series = "Proceedings of International Meeting on Information Display",
pages = "681--682",
booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",
note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",
}