Study on the effect of nitrogen-ion implantation in semi-insulating InP by using scanning tunneling microscopy

P. Jayavel; M. Haris; Y. Hayakawa; K. Santhakumar; C. R. Lee; T. Soga; K. Asokan

doi:10.3938/jkps.51.585

Study on the effect of nitrogen-ion implantation in semi-insulating InP by using scanning tunneling microscopy

P. Jayavel^*
, M. Haris
, Y. Hayakawa
, K. Santhakumar
, C. R. Lee
, T. Soga
, K. Asokan

^*Corresponding author for this work

Information Materials Engineering

Shizuoka University
Jeonbuk National University
Nagoya Institute of Technology
Inter University Accelerator Centre India

Research output: Contribution to journal › Journal article › peer-review

Abstract

The effects of low-energy (110 keV) nitrogen ion (N⁺) implantation at fluences of 1 × 10¹³ and 1 × 10 ¹⁴ cm^-2 in semi-insulating InP samples have been studied using cross sectional scanning tunneling microscopy. The atomically resolved images of the implanted samples reveal lattice disordering and point defects, which are attributed to implantation-induced effects. At fluence of 1 × 10¹⁴ cm^-2, deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N⁺ implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N⁺ implantation influences the atomic structures and the tunneling spectra of low-conductivity InP.

Original language	English
Pages (from-to)	585-588
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	2
DOIs	https://doi.org/10.3938/jkps.51.585
State	Published - 2007.08

Keywords

Atomic structures
Fluence
Ion implantation
STM
Tunneling spectroscopy

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.3938/jkps.51.585

Cite this

@article{ddc3af90d2b74299af2c40b8a585dfc0,

title = "Study on the effect of nitrogen-ion implantation in semi-insulating InP by using scanning tunneling microscopy",

abstract = "The effects of low-energy (110 keV) nitrogen ion (N+) implantation at fluences of 1 {\texttimes} 1013 and 1 {\texttimes} 10 14 cm-2 in semi-insulating InP samples have been studied using cross sectional scanning tunneling microscopy. The atomically resolved images of the implanted samples reveal lattice disordering and point defects, which are attributed to implantation-induced effects. At fluence of 1 {\texttimes} 1014 cm-2, deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N+ implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N+ implantation influences the atomic structures and the tunneling spectra of low-conductivity InP.",

keywords = "Atomic structures, Fluence, Ion implantation, STM, Tunneling spectroscopy",

author = "P. Jayavel and M. Haris and Y. Hayakawa and K. Santhakumar and Lee, \{C. R.\} and T. Soga and K. Asokan",

year = "2007",

month = aug,

doi = "10.3938/jkps.51.585",

language = "English",

volume = "51",

pages = "585--588",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "2",

}

TY - JOUR

T1 - Study on the effect of nitrogen-ion implantation in semi-insulating InP by using scanning tunneling microscopy

AU - Jayavel, P.

AU - Haris, M.

AU - Hayakawa, Y.

AU - Santhakumar, K.

AU - Lee, C. R.

AU - Soga, T.

AU - Asokan, K.

PY - 2007/8

Y1 - 2007/8

N2 - The effects of low-energy (110 keV) nitrogen ion (N+) implantation at fluences of 1 × 1013 and 1 × 10 14 cm-2 in semi-insulating InP samples have been studied using cross sectional scanning tunneling microscopy. The atomically resolved images of the implanted samples reveal lattice disordering and point defects, which are attributed to implantation-induced effects. At fluence of 1 × 1014 cm-2, deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N+ implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N+ implantation influences the atomic structures and the tunneling spectra of low-conductivity InP.

AB - The effects of low-energy (110 keV) nitrogen ion (N+) implantation at fluences of 1 × 1013 and 1 × 10 14 cm-2 in semi-insulating InP samples have been studied using cross sectional scanning tunneling microscopy. The atomically resolved images of the implanted samples reveal lattice disordering and point defects, which are attributed to implantation-induced effects. At fluence of 1 × 1014 cm-2, deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N+ implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N+ implantation influences the atomic structures and the tunneling spectra of low-conductivity InP.

KW - Atomic structures

KW - Fluence

KW - Ion implantation

KW - STM

KW - Tunneling spectroscopy

UR - https://www.scopus.com/pages/publications/34548331433

U2 - 10.3938/jkps.51.585

DO - 10.3938/jkps.51.585

M3 - Journal article

AN - SCOPUS:34548331433

SN - 0374-4884

VL - 51

SP - 585

EP - 588

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -

Study on the effect of nitrogen-ion implantation in semi-insulating InP by using scanning tunneling microscopy

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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