Abstract
Cd1-xZnxO alloy layers were grown by a radio-frequency magnetron co-sputtering system. By X-ray diffraction measurement, the Cd1-xZnxO layers were observed to have a single-phase cubic structure at x ≤ 0.21. However, polycrystalline having mixed phases was observed at x = 0.29. It seems that the high miscibility of Zn flux in CdO leads to a large fluctuation in phase segregation caused by the hexagonal ZnO and cubic CdO structure within CdZnO. Therefore, the maximum Zn-composition ratio without phase segregation was found to be x = 0.21. The bandgap energies of the Cd1-xZnxO layers between x = 0 and x = 0.21 were distributed from 2.574 eV to 2.892 eV, respectively, while the bandgap energy of x = 0.29 was a slightly smaller value of 2.834 eV. After rapid-thermal-annealing (RTA) treatment at 600°C, the bandgap energies of each x component decreased, especially the x = 0.29 layer, which converted into the double phase of a cubic-and-hexagonal structure existing in the cubic CdO (111) and hexagonal ZnO (0001) phases. Consequently, reliable formation and crystallinity improvement of the Cd1-xZnxO layers were achieved through an x composition ratio below x = 0.29 and an RTA method of short-time thermal-annealing below 600°C.
| Original language | English |
|---|---|
| Pages (from-to) | 215-220 |
| Number of pages | 6 |
| Journal | Electronic Materials Letters |
| Volume | 7 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2011.09 |
Keywords
- bandgap
- CdZnO
- characterization
- RF magnetron sputtering
- RTA
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
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