Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

Jun Seok Hwang; Hagyoul Bae; Jungmin Lee; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2015.2406700

Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

Jun Seok Hwang
, Hagyoul Bae
, Jungmin Lee
, Sung Jin Choi
, Dae Hwan Kim
, Dong Myong Kim

Division of Electronic Engineering

Kookmin University
Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

Sub-bandgap (E_ph < E_g) photonic capacitance-voltage method (PCVM) is proposed for the energy distribution [D_it(E)] of interface traps at the SiO₂/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors (TFTs). The differential capacitance-voltage (C-V) characteristics under dark and sub-bandgap photoillumination are obtained by excitation of electrons from the valence band to the empty interface states over the photoresponsive range (E_F ≤ E_t ≤ E_V + E_ph) while suppressing the band-to-band electron-hole-pair generation. We applied the sub-bandgap PCVM technique to accumulation mode p-channel LTPS TFTs with W/L = 3/30 μm/μ. Extracted interface trap density ranges D_it(E) = 10¹⁰-10¹¹ cm^-2eV^-1 over the bandgap.

Original language	English
Article number	7047697
Pages (from-to)	339-341
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	4
DOIs	https://doi.org/10.1109/LED.2015.2406700
State	Published - 2015.04.1

Keywords

Interface traps
low temperature poly-silicon
modeling
optical response
sub-bandgap photon
thin-film transistors

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10.1109/LED.2015.2406700

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@article{84291f123e3f44a1ae8b89ecfa916aad,

title = "Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors",

abstract = "Sub-bandgap (Eph < Eg) photonic capacitance-voltage method (PCVM) is proposed for the energy distribution [Dit(E)] of interface traps at the SiO2/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors (TFTs). The differential capacitance-voltage (C-V) characteristics under dark and sub-bandgap photoillumination are obtained by excitation of electrons from the valence band to the empty interface states over the photoresponsive range (EF ≤ Et ≤ EV + Eph) while suppressing the band-to-band electron-hole-pair generation. We applied the sub-bandgap PCVM technique to accumulation mode p-channel LTPS TFTs with W/L = 3/30 μm/μ. Extracted interface trap density ranges Dit(E) = 1010-1011 cm-2eV-1 over the bandgap.",

keywords = "Interface traps, low temperature poly-silicon, modeling, optical response, sub-bandgap photon, thin-film transistors",

author = "Hwang, \{Jun Seok\} and Hagyoul Bae and Jungmin Lee and Choi, \{Sung Jin\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

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day = "1",

doi = "10.1109/LED.2015.2406700",

language = "English",

volume = "36",

pages = "339--341",

journal = "IEEE Electron Device Letters",

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T1 - Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

AU - Hwang, Jun Seok

AU - Bae, Hagyoul

AU - Lee, Jungmin

AU - Choi, Sung Jin

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Sub-bandgap (Eph < Eg) photonic capacitance-voltage method (PCVM) is proposed for the energy distribution [Dit(E)] of interface traps at the SiO2/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors (TFTs). The differential capacitance-voltage (C-V) characteristics under dark and sub-bandgap photoillumination are obtained by excitation of electrons from the valence band to the empty interface states over the photoresponsive range (EF ≤ Et ≤ EV + Eph) while suppressing the band-to-band electron-hole-pair generation. We applied the sub-bandgap PCVM technique to accumulation mode p-channel LTPS TFTs with W/L = 3/30 μm/μ. Extracted interface trap density ranges Dit(E) = 1010-1011 cm-2eV-1 over the bandgap.

AB - Sub-bandgap (Eph < Eg) photonic capacitance-voltage method (PCVM) is proposed for the energy distribution [Dit(E)] of interface traps at the SiO2/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors (TFTs). The differential capacitance-voltage (C-V) characteristics under dark and sub-bandgap photoillumination are obtained by excitation of electrons from the valence band to the empty interface states over the photoresponsive range (EF ≤ Et ≤ EV + Eph) while suppressing the band-to-band electron-hole-pair generation. We applied the sub-bandgap PCVM technique to accumulation mode p-channel LTPS TFTs with W/L = 3/30 μm/μ. Extracted interface trap density ranges Dit(E) = 1010-1011 cm-2eV-1 over the bandgap.

KW - Interface traps

KW - low temperature poly-silicon

KW - modeling

KW - optical response

KW - sub-bandgap photon

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/84961350627

U2 - 10.1109/LED.2015.2406700

DO - 10.1109/LED.2015.2406700

M3 - Journal article

AN - SCOPUS:84961350627

SN - 0741-3106

VL - 36

SP - 339

EP - 341

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 7047697

ER -

Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

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