Abstract
We demonstrate a bottom-up approach to the construction of micro-LEDs as small as 150nm in lateral dimension. Molecular Beam Epitaxy (MBE) is used to fabricate such nanostructured LEDs from InGaN, from the blue to red regions of the spectrum, providing a single material set useful for an entire RGB display.
| Original language | English |
|---|---|
| Pages (from-to) | 432-435 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 51 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2020 |
| Event | 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 2020.08.3 → 2020.08.7 |
Keywords
- Display
- GaN
- Light emitting diode
- Nanowire
- Quantum dot
- Selective area growth
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