Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs

Euiyoun Hong; Daeyoun Yun; Hagyoul Bae; Hyunjun Choi; Won Hee Lee; Mihee Uhm; Hyojoon Seo; Jieun Lee; Jaeman Jang; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2012.2194981

Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs

Euiyoun Hong^*
, Daeyoun Yun
, Hagyoul Bae
, Hyunjun Choi
, Won Hee Lee
, Mihee Uhm
, Hyojoon Seo
, Jieun Lee
, Jaeman Jang
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

A distribution of interface states (D _it) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (E _ph < E _g) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (V _GS < V _T) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n-and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D _it = 10 ¹⁰-10 ¹¹ cm ^-2 ċ eV ^-1 with a typical U-shape.

Original language	English
Article number	6204316
Pages (from-to)	922-924
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2194981
State	Published - 2012

Keywords

Differential body factor
interface states
silicon on insulator (SOI)
subbandgap optical illumination
subthreshold slope

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10.1109/LED.2012.2194981

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title = "Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs",

abstract = "A distribution of interface states (D it) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (E ph < E g) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (V GS < V T) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n-and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D it = 10 10-10 11 cm -2 ċ eV -1 with a typical U-shape.",

keywords = "Differential body factor, interface states, silicon on insulator (SOI), subbandgap optical illumination, subthreshold slope",

author = "Euiyoun Hong and Daeyoun Yun and Hagyoul Bae and Hyunjun Choi and Lee, \{Won Hee\} and Mihee Uhm and Hyojoon Seo and Jieun Lee and Jaeman Jang and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2012",

doi = "10.1109/LED.2012.2194981",

language = "English",

volume = "33",

pages = "922--924",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "7",

}

TY - JOUR

T1 - Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs

AU - Hong, Euiyoun

AU - Yun, Daeyoun

AU - Bae, Hagyoul

AU - Choi, Hyunjun

AU - Lee, Won Hee

AU - Uhm, Mihee

AU - Seo, Hyojoon

AU - Lee, Jieun

AU - Jang, Jaeman

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2012

Y1 - 2012

N2 - A distribution of interface states (D it) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (E ph < E g) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (V GS < V T) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n-and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D it = 10 10-10 11 cm -2 ċ eV -1 with a typical U-shape.

AB - A distribution of interface states (D it) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (E ph < E g) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (V GS < V T) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n-and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D it = 10 10-10 11 cm -2 ċ eV -1 with a typical U-shape.

KW - Differential body factor

KW - interface states

KW - silicon on insulator (SOI)

KW - subbandgap optical illumination

KW - subthreshold slope

UR - https://www.scopus.com/pages/publications/84862863974

U2 - 10.1109/LED.2012.2194981

DO - 10.1109/LED.2012.2194981

M3 - Journal article

AN - SCOPUS:84862863974

SN - 0741-3106

VL - 33

SP - 922

EP - 924

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6204316

ER -

Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs

Abstract

Keywords

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