Abstract
We demonstrate a bottom-up approach to the construction of micro-LEDs as small as 150 nm in lateral dimension. Molecular beam epitaxy (MBE) is used to fabricate such nanostructured LEDs from InGaN, from the blue to red regions of the spectrum, providing a single material set useful for an entire RGB display.
| Original language | English |
|---|---|
| Pages (from-to) | 410-417 |
| Number of pages | 8 |
| Journal | Journal of the Society for Information Display |
| Volume | 28 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2020.05.1 |
Keywords
- GaN
- display
- light-emitting diode
- nanowire
- quantum dot
- selective area growth
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