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Submicron full-color LED pixels for microdisplays and micro-LED main displays

  • Xianhe Liu
  • , Yuanpeng Wu
  • , Yakshita Malhotra
  • , Yi Sun
  • , Yong Ho Ra
  • , Renjie Wang
  • , Matthew Stevenson
  • , Seth Coe-Sullivan*
  • , Zetian Mi
  • *Corresponding author for this work
  • McGill University
  • University of Michigan, Ann Arbor

Research output: Contribution to journalJournal articlepeer-review

Abstract

We demonstrate a bottom-up approach to the construction of micro-LEDs as small as 150 nm in lateral dimension. Molecular beam epitaxy (MBE) is used to fabricate such nanostructured LEDs from InGaN, from the blue to red regions of the spectrum, providing a single material set useful for an entire RGB display.

Original languageEnglish
Pages (from-to)410-417
Number of pages8
JournalJournal of the Society for Information Display
Volume28
Issue number5
DOIs
StatePublished - 2020.05.1

Keywords

  • GaN
  • display
  • light-emitting diode
  • nanowire
  • quantum dot
  • selective area growth

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