Sub–Milliampere Single–Quantum–Well InGaAs–GaAs–AlGaAs Addressable Laser Arrays

Hanmin Zhao; Yong Cheng; Michael H. MacDougal; Gye Mo Yang; P. Daniel Dapkus

doi:10.1109/68.388734

Sub–Milliampere Single–Quantum–Well InGaAs–GaAs–AlGaAs Addressable Laser Arrays

Hanmin Zhao
, Yong Cheng
, Michael H. MacDougal
, Gye Mo Yang
, P. Daniel Dapkus

Department of Semiconductor Science and Technology

JDS Uniphase
University of Southern California

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

Strained-quantum-well InGaAs-GaAs-AIGaAs lasers and laser arrays with record low threshold currents of 0.6 ma for cleaved devices and 0.145 ma for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.

Original language	English
Pages (from-to)	593-595
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1109/68.388734
State	Published - 1995.06

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title = "Sub{\textendash}Milliampere Single{\textendash}Quantum{\textendash}Well InGaAs{\textendash}GaAs{\textendash}AlGaAs Addressable Laser Arrays",

abstract = "Strained-quantum-well InGaAs-GaAs-AIGaAs lasers and laser arrays with record low threshold currents of 0.6 ma for cleaved devices and 0.145 ma for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.",

author = "Hanmin Zhao and Yong Cheng and MacDougal, \{Michael H.\} and Yang, \{Gye Mo\} and Dapkus, \{P. Daniel\}",

year = "1995",

month = jun,

doi = "10.1109/68.388734",

language = "English",

volume = "7",

pages = "593--595",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "6",

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T1 - Sub–Milliampere Single–Quantum–Well InGaAs–GaAs–AlGaAs Addressable Laser Arrays

AU - Zhao, Hanmin

AU - Cheng, Yong

AU - MacDougal, Michael H.

AU - Yang, Gye Mo

AU - Dapkus, P. Daniel

PY - 1995/6

Y1 - 1995/6

N2 - Strained-quantum-well InGaAs-GaAs-AIGaAs lasers and laser arrays with record low threshold currents of 0.6 ma for cleaved devices and 0.145 ma for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.

AB - Strained-quantum-well InGaAs-GaAs-AIGaAs lasers and laser arrays with record low threshold currents of 0.6 ma for cleaved devices and 0.145 ma for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.

UR - https://www.scopus.com/pages/publications/0029326983

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DO - 10.1109/68.388734

M3 - Journal article

AN - SCOPUS:0029326983

SN - 1041-1135

VL - 7

SP - 593

EP - 595

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

Sub–Milliampere Single–Quantum–Well InGaAs–GaAs–AlGaAs Addressable Laser Arrays

Abstract

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