Substantial pinning of the fermi level of plasma-treated n-type GaN surfaces

Youngjun Park; Hyunsoo Kim

doi:10.1143/APEX.4.015702

Substantial pinning of the fermi level of plasma-treated n-type GaN surfaces

Youngjun Park^*
, Hyunsoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

The Schottky barrier height of plasma-treated n-type GaN was investigated according to the work functions of metals including Cu, Au, and Pt. The extracted S-parameter was as low as 0.17, and the density of surface states was as high as 5.4 × 10¹³ states/(cm² eV), indicating substantial pinning of the Fermi level on plasma-treated n-type GaN surfaces.

Original language	English
Article number	015702
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.015702
State	Published - 2011.01

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1143/APEX.4.015702

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title = "Substantial pinning of the fermi level of plasma-treated n-type GaN surfaces",

abstract = "The Schottky barrier height of plasma-treated n-type GaN was investigated according to the work functions of metals including Cu, Au, and Pt. The extracted S-parameter was as low as 0.17, and the density of surface states was as high as 5.4 × 1013 states/(cm2 eV), indicating substantial pinning of the Fermi level on plasma-treated n-type GaN surfaces.",

author = "Youngjun Park and Hyunsoo Kim",

year = "2011",

month = jan,

doi = "10.1143/APEX.4.015702",

language = "English",

volume = "4",

journal = "Applied Physics Express",

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T1 - Substantial pinning of the fermi level of plasma-treated n-type GaN surfaces

AU - Park, Youngjun

AU - Kim, Hyunsoo

PY - 2011/1

Y1 - 2011/1

N2 - The Schottky barrier height of plasma-treated n-type GaN was investigated according to the work functions of metals including Cu, Au, and Pt. The extracted S-parameter was as low as 0.17, and the density of surface states was as high as 5.4 × 1013 states/(cm2 eV), indicating substantial pinning of the Fermi level on plasma-treated n-type GaN surfaces.

AB - The Schottky barrier height of plasma-treated n-type GaN was investigated according to the work functions of metals including Cu, Au, and Pt. The extracted S-parameter was as low as 0.17, and the density of surface states was as high as 5.4 × 1013 states/(cm2 eV), indicating substantial pinning of the Fermi level on plasma-treated n-type GaN surfaces.

UR - https://www.scopus.com/pages/publications/79251588420

U2 - 10.1143/APEX.4.015702

DO - 10.1143/APEX.4.015702

M3 - Journal article

AN - SCOPUS:79251588420

SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 1

M1 - 015702

ER -

Substantial pinning of the fermi level of plasma-treated n-type GaN surfaces

Abstract

Quacquarelli Symonds(QS) Subject Topics

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