Substrate rotation effects on β-FeSi2 epitaxial film growth using MBE

S. Y. Ji; J. W. Lim; J. F. Wang; S. Saitou; K. Mimura; G. M. Lalev; M. Isshiki

doi:10.1016/j.vacuum.2006.06.002

Substrate rotation effects on β-FeSi₂ epitaxial film growth using MBE

S. Y. Ji^*
, J. W. Lim
, J. F. Wang
, S. Saitou
, K. Mimura
, G. M. Lalev
, M. Isshiki

^*Corresponding author for this work

Metallurgical System Engineering

Tohoku University
Cardiff University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi₂ epitaxial film on hydrogen terminated Si (1 1 1) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology and compositional uniformity. In addition, purity analyses indicated that substrate rotation increases the concentration of non-metallic impurities (H, C, and O), but does not further introduce metallic impurities into β-FeSi₂ films.

Original language	English
Pages (from-to)	353-359
Number of pages	7
Journal	Vacuum
Volume	81
Issue number	3
DOIs	https://doi.org/10.1016/j.vacuum.2006.06.002
State	Published - 2006.10.24

Keywords

β-FeSi
Epitaxial growth
MBE
SIMS
Substrate rotation

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10.1016/j.vacuum.2006.06.002

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@article{eae0c46ce9ee4826a9fa3efd583e842d,

title = "Substrate rotation effects on β-FeSi2 epitaxial film growth using MBE",

abstract = "This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology and compositional uniformity. In addition, purity analyses indicated that substrate rotation increases the concentration of non-metallic impurities (H, C, and O), but does not further introduce metallic impurities into β-FeSi2 films.",

keywords = "β-FeSi, Epitaxial growth, MBE, SIMS, Substrate rotation",

author = "Ji, \{S. Y.\} and Lim, \{J. W.\} and Wang, \{J. F.\} and S. Saitou and K. Mimura and Lalev, \{G. M.\} and M. Isshiki",

year = "2006",

month = oct,

day = "24",

doi = "10.1016/j.vacuum.2006.06.002",

language = "English",

volume = "81",

pages = "353--359",

journal = "Vacuum",

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TY - JOUR

T1 - Substrate rotation effects on β-FeSi2 epitaxial film growth using MBE

AU - Ji, S. Y.

AU - Lim, J. W.

AU - Wang, J. F.

AU - Saitou, S.

AU - Mimura, K.

AU - Lalev, G. M.

AU - Isshiki, M.

PY - 2006/10/24

Y1 - 2006/10/24

N2 - This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology and compositional uniformity. In addition, purity analyses indicated that substrate rotation increases the concentration of non-metallic impurities (H, C, and O), but does not further introduce metallic impurities into β-FeSi2 films.

AB - This study showed that substrate rotation plays an important role in the growth of high-quality β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate using molecular beam epitaxy (MBE). The present work elucidated the substrate rotation effects on morphology, thickness, and purity. Results verified that substrate rotation is essential to grow thicker epilayers with better morphology and compositional uniformity. In addition, purity analyses indicated that substrate rotation increases the concentration of non-metallic impurities (H, C, and O), but does not further introduce metallic impurities into β-FeSi2 films.

KW - β-FeSi

KW - Epitaxial growth

KW - MBE

KW - SIMS

KW - Substrate rotation

UR - https://www.scopus.com/pages/publications/33749060627

U2 - 10.1016/j.vacuum.2006.06.002

DO - 10.1016/j.vacuum.2006.06.002

M3 - Journal article

AN - SCOPUS:33749060627

SN - 0042-207X

VL - 81

SP - 353

EP - 359

JO - Vacuum

JF - Vacuum

IS - 3

ER -

Substrate rotation effects on β-FeSi₂ epitaxial film growth using MBE

Abstract

Keywords

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