Substrate temperature influenced ZrO2 films for MOS devices

Paruchuri Kondaiah; S. V. Jagadeesh Chandra; Elvira Fortunato; Choi Chel Jong; G. Mohan Rao; D. V.Rama Koti Reddy; S. Uthanna

doi:10.1002/sia.6775

Substrate temperature influenced ZrO₂ films for MOS devices

Paruchuri Kondaiah^*
, S. V. Jagadeesh Chandra^*
, Elvira Fortunato
, Choi Chel Jong
, G. Mohan Rao
, D. V.Rama Koti Reddy
, S. Uthanna

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Indian Institute of Science Bangalore
Vignan's Institute of Information Technology
NOVA University Lisbon
Andhra University
Sri Venkateswara University

Research output: Contribution to journal › Journal article › peer-review

17 Scopus citations

Abstract

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.

Original language	English
Pages (from-to)	541-546
Number of pages	6
Journal	Surface and Interface Analysis
Volume	52
Issue number	9
DOIs	https://doi.org/10.1002/sia.6775
State	Published - 2020.09.1

Keywords

conduction mechanism
dielectric constant
high-k
interface engineering
leakage current
sputtering

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

Access to Document

10.1002/sia.6775

Cite this

@article{768dd9263c564a259296eaf8824d1d65,

title = "Substrate temperature influenced ZrO2 films for MOS devices",

abstract = "The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10−2 Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO2/Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10−7 to 0.64 × 10−9 A cm−2 with the increase of substrate temperature from 303 to 673 K.",

keywords = "conduction mechanism, dielectric constant, high-k, interface engineering, leakage current, sputtering",

author = "Paruchuri Kondaiah and \{Jagadeesh Chandra\}, \{S. V.\} and Elvira Fortunato and \{Chel Jong\}, Choi and \{Mohan Rao\}, G. and \{Koti Reddy\}, \{D. V.Rama\} and S. Uthanna",

note = "Publisher Copyright: {\textcopyright} 2020 John Wiley \& Sons, Ltd.",

year = "2020",

month = sep,

day = "1",

doi = "10.1002/sia.6775",

language = "English",

volume = "52",

pages = "541--546",

journal = "Surface and Interface Analysis",

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TY - JOUR

T1 - Substrate temperature influenced ZrO2 films for MOS devices

AU - Kondaiah, Paruchuri

AU - Jagadeesh Chandra, S. V.

AU - Fortunato, Elvira

AU - Chel Jong, Choi

AU - Mohan Rao, G.

AU - Koti Reddy, D. V.Rama

AU - Uthanna, S.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10−2 Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO2/Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10−7 to 0.64 × 10−9 A cm−2 with the increase of substrate temperature from 303 to 673 K.

AB - The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10−2 Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO2/Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10−7 to 0.64 × 10−9 A cm−2 with the increase of substrate temperature from 303 to 673 K.

KW - conduction mechanism

KW - dielectric constant

KW - high-k

KW - interface engineering

KW - leakage current

KW - sputtering

UR - https://www.scopus.com/pages/publications/85082405882

U2 - 10.1002/sia.6775

DO - 10.1002/sia.6775

M3 - Journal article

AN - SCOPUS:85082405882

SN - 0142-2421

VL - 52

SP - 541

EP - 546

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 9

ER -