Subsurface incorporation of Co atoms into Si(100)

Junghun Choi; Youngwoo Kim; Do Kyung Lim; Do Hwan Kim; Sehun Kim

doi:10.1021/jp2037872

Subsurface incorporation of Co atoms into Si(100)

Junghun Choi
, Youngwoo Kim
, Do Kyung Lim
, Do Hwan Kim^*
, Sehun Kim

^*Corresponding author for this work

Chemistry Education

Korea Advanced Institute of Science and Technology
Daegu University

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

The initial adsorption structures of Co on Si(100) were investigated using scanning tunneling microscopy (STM). Filled-state STM images showed bright protrusions at Si dimers. Density functional theory calculations demonstrated that Co atoms at subsurface interstitial sites beneath Si dimers are the most stable. Simulated STM images confirmed that the bright features observed at Si dimers were due to Co atoms incorporated at subsurface interstitial sites.

Original language	English
Pages (from-to)	15467-15470
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	115
Issue number	31
DOIs	https://doi.org/10.1021/jp2037872
State	Published - 2011.08.11

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10.1021/jp2037872

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@article{90c2dfc411d3492582b54916238d245a,

title = "Subsurface incorporation of Co atoms into Si(100)",

abstract = "The initial adsorption structures of Co on Si(100) were investigated using scanning tunneling microscopy (STM). Filled-state STM images showed bright protrusions at Si dimers. Density functional theory calculations demonstrated that Co atoms at subsurface interstitial sites beneath Si dimers are the most stable. Simulated STM images confirmed that the bright features observed at Si dimers were due to Co atoms incorporated at subsurface interstitial sites.",

author = "Junghun Choi and Youngwoo Kim and Lim, \{Do Kyung\} and Kim, \{Do Hwan\} and Sehun Kim",

year = "2011",

month = aug,

day = "11",

doi = "10.1021/jp2037872",

language = "English",

volume = "115",

pages = "15467--15470",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

number = "31",

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TY - JOUR

T1 - Subsurface incorporation of Co atoms into Si(100)

AU - Choi, Junghun

AU - Kim, Youngwoo

AU - Lim, Do Kyung

AU - Kim, Do Hwan

AU - Kim, Sehun

PY - 2011/8/11

Y1 - 2011/8/11

N2 - The initial adsorption structures of Co on Si(100) were investigated using scanning tunneling microscopy (STM). Filled-state STM images showed bright protrusions at Si dimers. Density functional theory calculations demonstrated that Co atoms at subsurface interstitial sites beneath Si dimers are the most stable. Simulated STM images confirmed that the bright features observed at Si dimers were due to Co atoms incorporated at subsurface interstitial sites.

AB - The initial adsorption structures of Co on Si(100) were investigated using scanning tunneling microscopy (STM). Filled-state STM images showed bright protrusions at Si dimers. Density functional theory calculations demonstrated that Co atoms at subsurface interstitial sites beneath Si dimers are the most stable. Simulated STM images confirmed that the bright features observed at Si dimers were due to Co atoms incorporated at subsurface interstitial sites.

UR - https://www.scopus.com/pages/publications/79961237678

U2 - 10.1021/jp2037872

DO - 10.1021/jp2037872

M3 - Journal article

AN - SCOPUS:79961237678

SN - 1932-7447

VL - 115

SP - 15467

EP - 15470

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 31

ER -

Subsurface incorporation of Co atoms into Si(100)

Abstract

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