Skip to main navigation Skip to search Skip to main content

Subthermionic Steep-Slope MoS2/MoO3/MoS2 Tunneling Field-Effect Transistor with Extremely Low Off-state Current Level

Research output: Contribution to journalJournal articlepeer-review

Original languageKorean
JournalACS Applied Electronic Materials
StatePublished - 2025.08.12

Cite this