Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

Hyeong Gon Kang; Y. H. Im; Seokcheol Ko; Sung Hun Lim; B. S. Han; Y. B. Hahn

doi:10.1016/j.physc.2003.07.004

Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

Hyeong Gon Kang^*
, Y. H. Im
, Seokcheol Ko
, Sung Hun Lim
, B. S. Han
, Y. B. Hahn

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University
Rensselaer Polytechnic Institute

Research output: Contribution to journal › Journal article › peer-review

13 Scopus citations

Abstract

Superconducting flux flow transistors (SFFT) was successfully fabricated by an inductively coupled plasma (ICP) etching technique. YBaCuO thin films on LaAlO₃ substrate were patterned as a three-terminal device by a conventional wet etching method and the ICP system. The characteristics of a fabricated device were investigated by examining the I-V curves under various applied currents. The control current dependence of the transresistance was also measured. The SFFT with a channel fabricated by the ICP system showed a transistor-like characteristic over the liquid nitrogen temperature.

Original language	English
Pages (from-to)	111-116
Number of pages	6
Journal	Physica C: Superconductivity and its Applications
Volume	400
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physc.2003.07.004
State	Published - 2004.01.1

Keywords

I-V curves
ICP
SFFT
Transresistance

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1016/j.physc.2003.07.004

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@article{9a48115040c54d2ba1ed40c1cebe4ffc,

title = "Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique",

abstract = "Superconducting flux flow transistors (SFFT) was successfully fabricated by an inductively coupled plasma (ICP) etching technique. YBaCuO thin films on LaAlO3 substrate were patterned as a three-terminal device by a conventional wet etching method and the ICP system. The characteristics of a fabricated device were investigated by examining the I-V curves under various applied currents. The control current dependence of the transresistance was also measured. The SFFT with a channel fabricated by the ICP system showed a transistor-like characteristic over the liquid nitrogen temperature.",

keywords = "I-V curves, ICP, SFFT, Transresistance",

author = "Kang, \{Hyeong Gon\} and Im, \{Y. H.\} and Seokcheol Ko and Lim, \{Sung Hun\} and Han, \{B. S.\} and Hahn, \{Y. B.\}",

year = "2004",

month = jan,

day = "1",

doi = "10.1016/j.physc.2003.07.004",

language = "English",

volume = "400",

pages = "111--116",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

number = "3-4",

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TY - JOUR

T1 - Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

AU - Kang, Hyeong Gon

AU - Im, Y. H.

AU - Ko, Seokcheol

AU - Lim, Sung Hun

AU - Han, B. S.

AU - Hahn, Y. B.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Superconducting flux flow transistors (SFFT) was successfully fabricated by an inductively coupled plasma (ICP) etching technique. YBaCuO thin films on LaAlO3 substrate were patterned as a three-terminal device by a conventional wet etching method and the ICP system. The characteristics of a fabricated device were investigated by examining the I-V curves under various applied currents. The control current dependence of the transresistance was also measured. The SFFT with a channel fabricated by the ICP system showed a transistor-like characteristic over the liquid nitrogen temperature.

AB - Superconducting flux flow transistors (SFFT) was successfully fabricated by an inductively coupled plasma (ICP) etching technique. YBaCuO thin films on LaAlO3 substrate were patterned as a three-terminal device by a conventional wet etching method and the ICP system. The characteristics of a fabricated device were investigated by examining the I-V curves under various applied currents. The control current dependence of the transresistance was also measured. The SFFT with a channel fabricated by the ICP system showed a transistor-like characteristic over the liquid nitrogen temperature.

KW - I-V curves

KW - ICP

KW - SFFT

KW - Transresistance

UR - https://www.scopus.com/pages/publications/0242411753

U2 - 10.1016/j.physc.2003.07.004

DO - 10.1016/j.physc.2003.07.004

M3 - Journal article

AN - SCOPUS:0242411753

SN - 0921-4534

VL - 400

SP - 111

EP - 116

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 3-4

ER -

Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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