Abstract
We report the temperature and magnetic-field dependence of electrical resistance of indium/indium-oxide (In/InOx) composite granular films in the insulating regime. The films show Mott variable-range hopping behavior at high temperatures, crossing over to a region of a much stronger temperature dependence of resistance near the superconducting transition temperature Tc of the grains. Below the crossover temperature the films show a large and negative magnetoresistance with a field dependence of ln[R(T,H)/R(T,0)]H2 in the low-field limit. We show that the temperature dependence of the zero-field resistance is well explained by a modified version of the conduction model for granular systems proposed by Adkins et al., which indicates that the crossover behavior of zero-field resistance is an effect of the grain superconductivity rather than the crossover from Mott to Efros-Shklovskii conduction. We also show that the magnetoresistance data can be explained quantitatively with the same model by taking into account the suppression of the gap in an external field.
| Original language | English |
|---|---|
| Pages (from-to) | 11709-11713 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 18 |
| DOIs | |
| State | Published - 1992 |
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