Abstract
We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.
| Original language | English |
|---|---|
| Article number | 030305 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 57 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2018.03 |
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