Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to a Cu agglomeration. To suppress the Cu agglomeration on the Ta layer, a capping layer was deposited on the Cu/Ta/Si structure using Ta or SiO₂ as a suppressor. In the case of the Ta suppressor, the agglomeration of Cu was observed between two distorted Ta films due to the difference in thermal expansion between the Cu film and the Ta film at high temperature. On the other hand, the SiO₂ layer was found to be suitable as a suppressor, and the Cu agglomeration did not occur even after annealing at 650 °C by the suppression of the Cu diffusion.