Surface morphologies and optical properties in CdxZn 1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

H. S. Lee; H. J. Kim; J. C. Choi; H. L. Park; J. S. Kim; T. W. Kim

doi:10.3938/jkps.50.759

Surface morphologies and optical properties in Cd_xZn _1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

H. S. Lee^*
, H. J. Kim
, J. C. Choi
, H. L. Park
, J. S. Kim
, T. W. Kim

^*Corresponding author for this work

Department of Physics

Yonsei University
Pukyong National University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

We have studied the growth of self-assembled Cd_0.6Zn _0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd_0.6Zn_0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd_0.6Zn_0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E₁-HH ₁). The activation energy of the electrons confined in the Cd _0.6Zn_0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.

Original language	English
Pages (from-to)	759-762
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.759
State	Published - 2007.03

Keywords

Atomic force microscopy
CdZnTe
Nanostructures
Photoluminescence
Quantum dots

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@article{aab9545f07494c8ea7fc0ae16d9c7bc2,

title = "Surface morphologies and optical properties in CdxZn 1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates",

abstract = "We have studied the growth of self-assembled Cd0.6Zn 0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E1-HH 1). The activation energy of the electrons confined in the Cd 0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.",

keywords = "Atomic force microscopy, CdZnTe, Nanostructures, Photoluminescence, Quantum dots",

author = "Lee, \{H. S.\} and Kim, \{H. J.\} and Choi, \{J. C.\} and Park, \{H. L.\} and Kim, \{J. S.\} and Kim, \{T. W.\}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.759",

language = "English",

volume = "50",

pages = "759--762",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "3",

}

TY - JOUR

T1 - Surface morphologies and optical properties in CdxZn 1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

AU - Lee, H. S.

AU - Kim, H. J.

AU - Choi, J. C.

AU - Park, H. L.

AU - Kim, J. S.

AU - Kim, T. W.

PY - 2007/3

Y1 - 2007/3

N2 - We have studied the growth of self-assembled Cd0.6Zn 0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E1-HH 1). The activation energy of the electrons confined in the Cd 0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.

AB - We have studied the growth of self-assembled Cd0.6Zn 0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E1-HH 1). The activation energy of the electrons confined in the Cd 0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.

KW - Atomic force microscopy

KW - CdZnTe

KW - Nanostructures

KW - Photoluminescence

KW - Quantum dots

UR - https://www.scopus.com/pages/publications/34147167578

U2 - 10.3938/jkps.50.759

DO - 10.3938/jkps.50.759

M3 - Journal article

AN - SCOPUS:34147167578

SN - 0374-4884

VL - 50

SP - 759

EP - 762

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Surface morphologies and optical properties in Cd_xZn _1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

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Keywords

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