Surface-potential-based analytic DC I-V model with effective electron density for a-IGZO TFTS considering the parasitic resistance

A surface-potential-based analytic direct-current I-V model for amorphous indium-gallium-zinc-oxide thin-film transistors is proposed by adopting an effective electron density (n_{\rm eff}}) model for inclusion of both free carriers and localized charges in the channel. The proposed n _{\rm eff} is efficient in reducing the error caused by neglecting the localized electron density n_{\rm loc} and allows a closed form of the analytic I-V model. The potential drop across the parasitic resistance R _P in the source and drain regions is also fully considered in the model. Finally, we confirmed good agreement of the proposed model with measured I_{\rm DS}-V_{\rm DS} characteristics over a wide range of V_{\rm GS} and V_{\rm DS}.