Abstract
Vertically aligned ZnO nanorods were fabricated on Al2O 3(001) substrates with various GaN interlayers by a catalyst-free metal-organic chemical vapor deposition. We observed that the shape and quality of ZnO nanorods grown on the GaN interlayers were considerably sensitive to the surface roughness of the interlayers. We also investigated orientation-dependent residual strain in the ZnO nanorods grown on Al2O3 substrates using polarized x-ray absorption fine structure (XAFS) measurements at Zu K edge. The XAFS revealed that the residual strain relaxation of Zn-O pairs in ab plane played a key role in the ZnO nanorod growth.
| Original language | English |
|---|---|
| Article number | 251903 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 25 |
| DOIs | |
| State | Published - 2006.06.19 |
Quacquarelli Symonds(QS) Subject Topics
- Physics & Astronomy
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