Synthesis and characterization of ferromagnetic Zn 1-xCo xO films

S. Y. Seo; C. H. Kwak; S. H. Kim; S. H. Park; I. J. Lee; S. W. Han

doi:10.1016/j.jcrysgro.2012.02.022

Synthesis and characterization of ferromagnetic Zn _1-xCo _xO films

S. Y. Seo
, C. H. Kwak
, S. H. Kim
, S. H. Park
, I. J. Lee
, S. W. Han^*

^*Corresponding author for this work

Pohang University of Science and Technology
Research Institute of Industrial Science & Technology, Pohang

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

High-quality Zn _1-xCo _xO (ZnCoO) thin films with different Co concentrations (x=0-0.07) were synthesized on Al ₂O ₃ substrates using a radio-frequency magnetron sputtering process. The structural, chemical, optical, and electrical properties of the films were characterized using various techniques. High-resolution X-ray diffraction measurements showed that the ZnCoO films had a c-oriented hexagonal wurtzite structure with no extra phases. The lattice constants of the films increased slightly with increasing the Co concentration ratio. X-ray photoelectron spectra show the incorporation of Co ² ions in the ZnO host without the formations of Co clusters. Hall measurements revealed that the films were n-type with a charge carrier density of ∼2.6×10 ¹⁸ per cm ³. A neutral-donor bound exciton peak (D ⁰X) from all specimens was observed at 3.36 eV using photoluminescence measurements at 10 K. The physical and chemical properties of the films suggested that their ferromagnetic properties originated from a direct exchange interaction between magnetic Co ions.

Original language	English
Pages (from-to)	56-60
Number of pages	5
Journal	Journal of Crystal Growth
Volume	346
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.02.022
State	Published - 2012.05.1

Keywords

A1. Crystal structure
B1. Zinc compounds
B2. Magnetic materials
B2. Semiconducting II-VI materials

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

Access to Document

10.1016/j.jcrysgro.2012.02.022

Cite this

@article{b1ba7e61c41a415481b748f16d22c762,

title = "Synthesis and characterization of ferromagnetic Zn 1-xCo xO films",

abstract = "High-quality Zn 1-xCo xO (ZnCoO) thin films with different Co concentrations (x=0-0.07) were synthesized on Al 2O 3 substrates using a radio-frequency magnetron sputtering process. The structural, chemical, optical, and electrical properties of the films were characterized using various techniques. High-resolution X-ray diffraction measurements showed that the ZnCoO films had a c-oriented hexagonal wurtzite structure with no extra phases. The lattice constants of the films increased slightly with increasing the Co concentration ratio. X-ray photoelectron spectra show the incorporation of Co 2 ions in the ZnO host without the formations of Co clusters. Hall measurements revealed that the films were n-type with a charge carrier density of ∼2.6×10 18 per cm 3. A neutral-donor bound exciton peak (D 0X) from all specimens was observed at 3.36 eV using photoluminescence measurements at 10 K. The physical and chemical properties of the films suggested that their ferromagnetic properties originated from a direct exchange interaction between magnetic Co ions.",

keywords = "A1. Crystal structure, B1. Zinc compounds, B2. Magnetic materials, B2. Semiconducting II-VI materials",

author = "Seo, \{S. Y.\} and Kwak, \{C. H.\} and Kim, \{S. H.\} and Park, \{S. H.\} and Lee, \{I. J.\} and Han, \{S. W.\}",

year = "2012",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2012.02.022",

language = "English",

volume = "346",

pages = "56--60",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Synthesis and characterization of ferromagnetic Zn 1-xCo xO films

AU - Seo, S. Y.

AU - Kwak, C. H.

AU - Kim, S. H.

AU - Park, S. H.

AU - Lee, I. J.

AU - Han, S. W.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - High-quality Zn 1-xCo xO (ZnCoO) thin films with different Co concentrations (x=0-0.07) were synthesized on Al 2O 3 substrates using a radio-frequency magnetron sputtering process. The structural, chemical, optical, and electrical properties of the films were characterized using various techniques. High-resolution X-ray diffraction measurements showed that the ZnCoO films had a c-oriented hexagonal wurtzite structure with no extra phases. The lattice constants of the films increased slightly with increasing the Co concentration ratio. X-ray photoelectron spectra show the incorporation of Co 2 ions in the ZnO host without the formations of Co clusters. Hall measurements revealed that the films were n-type with a charge carrier density of ∼2.6×10 18 per cm 3. A neutral-donor bound exciton peak (D 0X) from all specimens was observed at 3.36 eV using photoluminescence measurements at 10 K. The physical and chemical properties of the films suggested that their ferromagnetic properties originated from a direct exchange interaction between magnetic Co ions.

AB - High-quality Zn 1-xCo xO (ZnCoO) thin films with different Co concentrations (x=0-0.07) were synthesized on Al 2O 3 substrates using a radio-frequency magnetron sputtering process. The structural, chemical, optical, and electrical properties of the films were characterized using various techniques. High-resolution X-ray diffraction measurements showed that the ZnCoO films had a c-oriented hexagonal wurtzite structure with no extra phases. The lattice constants of the films increased slightly with increasing the Co concentration ratio. X-ray photoelectron spectra show the incorporation of Co 2 ions in the ZnO host without the formations of Co clusters. Hall measurements revealed that the films were n-type with a charge carrier density of ∼2.6×10 18 per cm 3. A neutral-donor bound exciton peak (D 0X) from all specimens was observed at 3.36 eV using photoluminescence measurements at 10 K. The physical and chemical properties of the films suggested that their ferromagnetic properties originated from a direct exchange interaction between magnetic Co ions.

KW - A1. Crystal structure

KW - B1. Zinc compounds

KW - B2. Magnetic materials

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/84862823408

U2 - 10.1016/j.jcrysgro.2012.02.022

DO - 10.1016/j.jcrysgro.2012.02.022

M3 - Journal article

AN - SCOPUS:84862823408

SN - 0022-0248

VL - 346

SP - 56

EP - 60

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -