Synthesis and properties of c-axis oriented epitaxial MgB2 thin films

S. D. Bu; D. M. Kim; J. H. Choi; J. Giencke; E. E. Hellstrom; D. C. Larbalestier; S. Patnaik; L. Cooley; C. B. Eom; J. Lettieri; D. G. Schlom; W. Tian; X. Q. Pan

doi:10.1063/1.1504490

Synthesis and properties of c-axis oriented epitaxial MgB₂ thin films

S. D. Bu
, D. M. Kim
, J. H. Choi
, J. Giencke
, E. E. Hellstrom
, D. C. Larbalestier
, S. Patnaik
, L. Cooley
, C. B. Eom
, J. Lettieri
, D. G. Schlom
, W. Tian
, X. Q. Pan

Department of Physics

University of Wisconsin-Madison
Pennsylvania State University
University of Michigan, Ann Arbor

Research output: Contribution to journal › Journal article › peer-review

90 Scopus citations

Abstract

We report the growth and properties of epitaxial MgB₂ thin films on (0001) Al₂O₃ substrates. The MgB₂ thin films were prepared by depositing boron films via radio-frequency (rf) magnetron sputtering, followed by a postdeposition anneal at 850°C in magnesium vapor. X-ray diffraction and cross-sectional transmission electron microscopy reveal that the epitaxial MgB₂ films are oriented with their c-axis normal to the (0001) Al₂O₃ substrate with a 30° rotation in the (0001) plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, H_c2 ^∥/H_c2^⊥, was about 3 at 25 K. The critical current densities at 4.2 and 20 K (at 1 T perpendicular magnetic field) are 5×10⁶ and 1×10⁶A/cm², respectively. The controlled growth of epitaxial MgB₂ thin films opens a new avenue in both understanding superconductivity in MgB₂ and technological applications.

Original language	English
Pages (from-to)	1851-1853
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1504490
State	Published - 2002.09.2

Access to Document

10.1063/1.1504490

Cite this

@article{8a283216dab249b8b8ae7784c948c920,

title = "Synthesis and properties of c-axis oriented epitaxial MgB2 thin films",

abstract = "We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via radio-frequency (rf) magnetron sputtering, followed by a postdeposition anneal at 850°C in magnesium vapor. X-ray diffraction and cross-sectional transmission electron microscopy reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate with a 30° rotation in the (0001) plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2 ∥/Hc2⊥, was about 3 at 25 K. The critical current densities at 4.2 and 20 K (at 1 T perpendicular magnetic field) are 5×106 and 1×106A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.",

author = "Bu, \{S. D.\} and Kim, \{D. M.\} and Choi, \{J. H.\} and J. Giencke and Hellstrom, \{E. E.\} and Larbalestier, \{D. C.\} and S. Patnaik and L. Cooley and Eom, \{C. B.\} and J. Lettieri and Schlom, \{D. G.\} and W. Tian and Pan, \{X. Q.\}",

year = "2002",

month = sep,

day = "2",

doi = "10.1063/1.1504490",

language = "English",

volume = "81",

pages = "1851--1853",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Synthesis and properties of c-axis oriented epitaxial MgB2 thin films

AU - Bu, S. D.

AU - Kim, D. M.

AU - Choi, J. H.

AU - Giencke, J.

AU - Hellstrom, E. E.

AU - Larbalestier, D. C.

AU - Patnaik, S.

AU - Cooley, L.

AU - Eom, C. B.

AU - Lettieri, J.

AU - Schlom, D. G.

AU - Tian, W.

AU - Pan, X. Q.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via radio-frequency (rf) magnetron sputtering, followed by a postdeposition anneal at 850°C in magnesium vapor. X-ray diffraction and cross-sectional transmission electron microscopy reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate with a 30° rotation in the (0001) plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2 ∥/Hc2⊥, was about 3 at 25 K. The critical current densities at 4.2 and 20 K (at 1 T perpendicular magnetic field) are 5×106 and 1×106A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.

AB - We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via radio-frequency (rf) magnetron sputtering, followed by a postdeposition anneal at 850°C in magnesium vapor. X-ray diffraction and cross-sectional transmission electron microscopy reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate with a 30° rotation in the (0001) plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2 ∥/Hc2⊥, was about 3 at 25 K. The critical current densities at 4.2 and 20 K (at 1 T perpendicular magnetic field) are 5×106 and 1×106A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.

UR - https://www.scopus.com/pages/publications/79956050118

U2 - 10.1063/1.1504490

DO - 10.1063/1.1504490

M3 - Journal article

AN - SCOPUS:79956050118

SN - 0003-6951

VL - 81

SP - 1851

EP - 1853

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Synthesis and properties of c-axis oriented epitaxial MgB₂ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this