Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorgank chemical vapor deposition

We demonstrated the growth of indium nitride (InN) nanowires on Si(lll) substrates by metalorganic chemical vapor deposition without the use of any intermediate GaN or A1N buffer layer. The InN nanowireswere grown by forming the Au + In droplets and In droplets on the Au and In-coated Si substrate. The growth conditions such as chamber pressure, chamber temperature, reaction gas flow rate, and carrier gasflow rate were optimized to yield nanowires free from contamination. Depending on the growth parameters different growth regimes for the InNnanowires were identified. The strength of self-catalytic route has been highlighted. The morphology andmicrostructures of samples were characterized by x-ray diffraction and scanning electron microscopy (SEM). The transmission electron microscopy and SEM Investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 400 nm, and lengths up to 3 μ. Photoluminescence spectraof the InN nanowires showed a strong broad emission peak at 0.77eV.