Synthesis of Spherical Hexagonal Boron Nitride via Precursor Morphology Control

The growing demand for high-performance semiconductors, driven by the advancement of emerging industries such as artificial intelligence (AI), necessitates the development of novel materials for thermal management. In this respect, hexagonal boron nitride (h-BN) has emerged as a promising candidate due to its unique properties. However, challenges arise from its two-dimensional layered structure, resulting in thermal transfer anisotropy and poor fluidity when mixed with polymers for thermal management. To address these challenges, researchers have attempted to fabricate h-BN into spherical shapes. In this study, a two-step synthesis method of spherical h-BN (s-BN) particles via control of the precursor morphology and a subsequent thermal reaction is proposed. Therefore, as-fabricated s-BN exhibits solid spherical shapes with a uniform size distribution, with a median particle size of 0.955 μm. These s-BN particles, when integrated into epoxy resin, disperse homogeneously, forming efficient heat transfer networks that achieve a 138% improvement in thermal conductivity compared to h-BN particles with similar diameters, even at lower viscosities. This can overcome the limitations found in the conventional particle shapes while preserving the advantages of h-BN. Furthermore, it is anticipated that the s-BN will be applied in thermal management systems, thereby accelerating advancements in electronic technology.