Temperature and emission angle dependence of photoluminescence from an InGaAs/GaAs quantum well in a microcavity structure

The spontaneous emission from an InGaAs/GaAs quantum well embedded in a semiconductor vertical-cavity structure is studied. The spontaneous emission enhancement at the cavity mode is clearly identified from the photoluminescence measurement, depending on the wavelength separation between the excitonic emission and the cavity resonance mode which is tuned by changing the measurement temperature and the emission angle. The emission intensity of the cavity resonance mode is increased as the excitonic emission approaches the cavity mode, thereby obtaining evidence of coupling between the exciton and the cavity mode. The emission wavelength of the cavity mode shifts to shorter wavelengths as the emission angle increases, which is clarified with theoretical calculations performed with the transfer-matrix method.