Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

Y. S. Kim; H. K. Choi; Z. G. Khim; J. C. Woo; Y. D. Park; S. H. Chun

doi:10.1002/pssc.200564144

Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

Y. S. Kim
, H. K. Choi
, Z. G. Khim
, J. C. Woo
, Y. D. Park
, S. H. Chun^*

^*Corresponding author for this work

Department of Physics

Seoul National University
Sejong University
Korea Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated.

Original language	English
Pages (from-to)	697-700
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200564144
State	Published - 2006
Event	32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany Duration: 2005.09.18 → 2005.09.22

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title = "Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers",

abstract = "We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated.",

author = "Kim, \{Y. S.\} and Choi, \{H. K.\} and Khim, \{Z. G.\} and Woo, \{J. C.\} and Park, \{Y. D.\} and Chun, \{S. H.\}",

year = "2006",

doi = "10.1002/pssc.200564144",

language = "English",

volume = "3",

pages = "697--700",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "3",

note = "32nd International Symposium on Compound Semiconductors, ISCS-2005 ; Conference date: 18-09-2005 Through 22-09-2005",

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TY - JOUR

T1 - Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

AU - Kim, Y. S.

AU - Choi, H. K.

AU - Khim, Z. G.

AU - Woo, J. C.

AU - Park, Y. D.

AU - Chun, S. H.

PY - 2006

Y1 - 2006

N2 - We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated.

AB - We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated.

UR - https://www.scopus.com/pages/publications/33646181381

U2 - 10.1002/pssc.200564144

DO - 10.1002/pssc.200564144

M3 - Conference article

AN - SCOPUS:33646181381

SN - 1610-1634

VL - 3

SP - 697

EP - 700

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005

Y2 - 18 September 2005 through 22 September 2005

ER -

Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

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