Temperature dependence of the photocurrent in Ge1−xSnx layers

Sukill Kang; Yeon Ho Kil; Tae Soo Jeong; Chel Jong Choi; Kyu Hwan Shim; Dae Jung Kim; Yong Dae Choi; Taek Sung Kim

doi:10.3938/jkps.69.207

Temperature dependence of the photocurrent in Ge_1−xSn_x layers

Sukill Kang
, Yeon Ho Kil
, Tae Soo Jeong
, Chel Jong Choi
, Kyu Hwan Shim
, Dae Jung Kim
, Yong Dae Choi
, Taek Sung Kim^*

^*Corresponding author for this work

Jeonbuk National University
Hanbat National University
Mokwon University
Kunsan National University

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The temperature dependence of the photocurrent in Ge_1−xSn_x layers was measured for different Sn compositions (0.00 ≤ x ≤ 0.83%). As the Sn composition in the Ge_1−xSn_x layer increased, the photocurrent peak was clearly red shifted in comparison with that of Ge. As the measurement temperature was increased, the photocurrent peak was also clearly red shifted. The measured temperature dependence of the energy band gap was nicely fitted by using Varshni’s empirical expression. Temperature-dependent bowing parameters were fitted for the equation relationship.

Original language	English
Pages (from-to)	207-212
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	69
Issue number	2
DOIs	https://doi.org/10.3938/jkps.69.207
State	Published - 2016.07.1

Keywords

Bowing parameter
GeSn
Photocurrent
RTCVD

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.3938/jkps.69.207

Cite this

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title = "Temperature dependence of the photocurrent in Ge1−xSnx layers",

abstract = "The temperature dependence of the photocurrent in Ge1−xSnx layers was measured for different Sn compositions (0.00 ≤ x ≤ 0.83\%). As the Sn composition in the Ge1−xSnx layer increased, the photocurrent peak was clearly red shifted in comparison with that of Ge. As the measurement temperature was increased, the photocurrent peak was also clearly red shifted. The measured temperature dependence of the energy band gap was nicely fitted by using Varshni{\textquoteright}s empirical expression. Temperature-dependent bowing parameters were fitted for the equation relationship.",

keywords = "Bowing parameter, GeSn, Photocurrent, RTCVD",

author = "Sukill Kang and Kil, \{Yeon Ho\} and Jeong, \{Tae Soo\} and Choi, \{Chel Jong\} and Shim, \{Kyu Hwan\} and Kim, \{Dae Jung\} and Choi, \{Yong Dae\} and Kim, \{Taek Sung\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Physical Society.",

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day = "1",

doi = "10.3938/jkps.69.207",

language = "English",

volume = "69",

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journal = "Journal of the Korean Physical Society",

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T1 - Temperature dependence of the photocurrent in Ge1−xSnx layers

AU - Kang, Sukill

AU - Kil, Yeon Ho

AU - Jeong, Tae Soo

AU - Choi, Chel Jong

AU - Shim, Kyu Hwan

AU - Kim, Dae Jung

AU - Choi, Yong Dae

AU - Kim, Taek Sung

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The temperature dependence of the photocurrent in Ge1−xSnx layers was measured for different Sn compositions (0.00 ≤ x ≤ 0.83%). As the Sn composition in the Ge1−xSnx layer increased, the photocurrent peak was clearly red shifted in comparison with that of Ge. As the measurement temperature was increased, the photocurrent peak was also clearly red shifted. The measured temperature dependence of the energy band gap was nicely fitted by using Varshni’s empirical expression. Temperature-dependent bowing parameters were fitted for the equation relationship.

AB - The temperature dependence of the photocurrent in Ge1−xSnx layers was measured for different Sn compositions (0.00 ≤ x ≤ 0.83%). As the Sn composition in the Ge1−xSnx layer increased, the photocurrent peak was clearly red shifted in comparison with that of Ge. As the measurement temperature was increased, the photocurrent peak was also clearly red shifted. The measured temperature dependence of the energy band gap was nicely fitted by using Varshni’s empirical expression. Temperature-dependent bowing parameters were fitted for the equation relationship.

KW - Bowing parameter

KW - GeSn

KW - Photocurrent

KW - RTCVD

UR - https://www.scopus.com/pages/publications/84979582204

U2 - 10.3938/jkps.69.207

DO - 10.3938/jkps.69.207

M3 - Journal article

AN - SCOPUS:84979582204

SN - 0374-4884

VL - 69

SP - 207

EP - 212

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -