Abstract
We have investigated the temperature dependent current-voltage (I-V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance-voltage (C-V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C-V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and 1 MHz, respectively. The discrepancy of barrier heights obtained from I-V at 300 K and C-V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current-voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel-Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission.
| Original language | English |
|---|---|
| Pages (from-to) | 146-150 |
| Number of pages | 5 |
| Journal | Journal of Alloys and Compounds |
| Volume | 504 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2010.08.31 |
Keywords
- Frenkel-Poole emission
- I-V-T characteristics
- InP
- Schottky contacts
- Schottky emission
- Ti
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Mechanical
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