Temperature dependency of schottky barrier parameters of ti schottky contacts to si-on-insulator

We have investigated the temperature-dependent currentvoltage (IV) characteristics of Ti Schottky structure on the Si-on-insulator (SOI) in the temperature range of 175375K by steps of 25 K. As decreasing temperature, the barrier height and ideality factor of Ti/SOI Schottky contact were found to be decreased and increased, respectively, indicating a considerable deviation from the ideal thermionic emission model in its current conduction mechanism. From the linear relationship between the barrier heights and ideality factors, the homogeneous barrier height was calculated to be 0.76 eV. The mean barrier height of 0.87 eVand the modified Richardson constant value of 30.63 Ȧcm ^-2̇K^-2 were obtained using modified Richardson plot. On the basis of a thermionic emission mechanism with a Gaussian distribution of the barrier heights, the temperature-dependent IV behavior of Ti/SOI Schottky contact was explained in terms of barrier height inhomogeneities at the interface between Ti and SOI.