Temperature dependent current-voltage and capacitance-voltage characteristics of an Au/n-type Si schottky barrier diode modified using a pedot: PSS interlayer

The temperature dependence of the current-voltage ( I-V ) and capacitance-voltage ( C-V ) characteristics of an Au /n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height ( ) B ), ideality factor (n), saturation current ( I 0 ), doping concentration ( N D ), and series resistance ( R s ), were obtained as a function of temperature. The Richardson constant (A) obtained from the In(I o /T 2 ) versus 1000 /T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height ( ℙ bo ) and standard deviation ( • 0 ) calculated using the apparent Schottky barrier height () ap ) versus 1 /2kT plot were 1.26 eV and 0.15 eV, respectively. From a fi t of the modified Richardson plot of ln( I 0 /T 2 ) ^(q•) 2 /2( kT ) 2 versus 1000 /T, the A was extracted as 134 A/cm 2 K 2 , which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au /PEDOT:PSS/n-Si SBD was described and discussed.