Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers

Chel-Jong Choi

Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers

Chel-Jong Choi

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of the Korean Physical Society
State	Published - 2012.05.1

Cite this

@article{6e6919fe769c4d65a202a5d4dd57098c,

title = "Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers",

author = "Chel-Jong Choi",

year = "2012",

month = may,

day = "1",

language = "Korean",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

}