Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

Seongjun Kim; Kwang Soon Ahn; Jae Hyun Ryou; Hyunsoo Kim

doi:10.1007/s13391-017-1606-1

Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

Seongjun Kim
, Kwang Soon Ahn
, Jae Hyun Ryou
, Hyunsoo Kim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (I_DS,max) of 700 mA/mm at a gate bias voltage (V_GS) of 0 V and a maximum transconductance (g_m,max) of 190 mS/mm at drain-source voltage (V_DS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that I_DS,max and g_m,max have weak temperature dependence with a power-law relation of ~T^−0.5, owing to suppressed optical phonon scattering. The threshold voltage (V_th) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.].

Original language	English
Pages (from-to)	302-306
Number of pages	5
Journal	Electronic Materials Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1007/s13391-017-1606-1
State	Published - 2017.07.1

Keywords

AlInN:Mg/GaN
DC (Direct Current)
HEMTs
temperature dependence

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1007/s13391-017-1606-1

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@article{2f944459e39645ba85f618806a3c8b75,

title = "Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors",

abstract = "A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage (VDS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that IDS,max and gm,max have weak temperature dependence with a power-law relation of \textasciitilde{}T−0.5, owing to suppressed optical phonon scattering. The threshold voltage (Vth) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.].",

keywords = "AlInN:Mg/GaN, DC (Direct Current), HEMTs, temperature dependence",

author = "Seongjun Kim and Ahn, \{Kwang Soon\} and Ryou, \{Jae Hyun\} and Hyunsoo Kim",

note = "Publisher Copyright: {\textcopyright} 2017, The Korean Institute of Metals and Materials and Springer Science+Business Media B.V.",

year = "2017",

month = jul,

day = "1",

doi = "10.1007/s13391-017-1606-1",

language = "English",

volume = "13",

pages = "302--306",

journal = "Electronic Materials Letters",

issn = "1738-8090",

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}

TY - JOUR

T1 - Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

AU - Kim, Seongjun

AU - Ahn, Kwang Soon

AU - Ryou, Jae Hyun

AU - Kim, Hyunsoo

PY - 2017/7/1

Y1 - 2017/7/1

N2 - A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage (VDS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that IDS,max and gm,max have weak temperature dependence with a power-law relation of ~T−0.5, owing to suppressed optical phonon scattering. The threshold voltage (Vth) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.].

AB - A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage (VDS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that IDS,max and gm,max have weak temperature dependence with a power-law relation of ~T−0.5, owing to suppressed optical phonon scattering. The threshold voltage (Vth) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.].

KW - AlInN:Mg/GaN

KW - DC (Direct Current)

KW - HEMTs

KW - temperature dependence

UR - https://www.scopus.com/pages/publications/85021183061

U2 - 10.1007/s13391-017-1606-1

DO - 10.1007/s13391-017-1606-1

M3 - Journal article

AN - SCOPUS:85021183061

SN - 1738-8090

VL - 13

SP - 302

EP - 306

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 4

ER -

Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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