Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

David S. Meyaard; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Sang Heon Han; Min Ho Kim; Cheolsoo Sone; Seung Jae Oh; Jong Kyu Kim

doi:10.1063/1.3688041

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

David S. Meyaard^*
, Qifeng Shan
, Jaehee Cho
, E. Fred Schubert
, Sang Heon Han
, Min Ho Kim
, Cheolsoo Sone
, Seung Jae Oh
, Jong Kyu Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Samsung
Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

127 Scopus citations

Abstract

The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density.

Original language	English
Article number	081106
Journal	Applied Physics Letters
Volume	100
Issue number	8
DOIs	https://doi.org/10.1063/1.3688041
State	Published - 2012.02.20

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10.1063/1.3688041

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@article{0b288d24984744fd96a4914269da34df,

title = "Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities",

abstract = "The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density.",

author = "Meyaard, \{David S.\} and Qifeng Shan and Jaehee Cho and \{Fred Schubert\}, E. and Han, \{Sang Heon\} and Kim, \{Min Ho\} and Cheolsoo Sone and \{Jae Oh\}, Seung and \{Kyu Kim\}, Jong",

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month = feb,

day = "20",

doi = "10.1063/1.3688041",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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T1 - Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

AU - Meyaard, David S.

AU - Shan, Qifeng

AU - Cho, Jaehee

AU - Fred Schubert, E.

AU - Han, Sang Heon

AU - Kim, Min Ho

AU - Sone, Cheolsoo

AU - Jae Oh, Seung

AU - Kyu Kim, Jong

PY - 2012/2/20

Y1 - 2012/2/20

N2 - The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density.

AB - The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density.

UR - https://www.scopus.com/pages/publications/84863240712

U2 - 10.1063/1.3688041

DO - 10.1063/1.3688041

M3 - Journal article

AN - SCOPUS:84863240712

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081106

ER -

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

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